Annealing effects on the interface and insulator properties of plasma deposited Al SiOxNyHz Si devices

Conductance transient comparative analysis of electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiNx, SiO2/SiNx, and SiOxNy dielectric films on silicon substrates

Mártil de la Plaza, Ignacio
González Díaz, Germán
Prado Millán, Álvaro del
San Andres Serrano, Enrique

January 2004

An interface quality comparative study of metal-insulator-semiconductor (MIS) structures based on Si...

Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing

Mártil de la Plaza, Ignacio
González Díaz, Germán

July 1999

Ex situ deposited SiNx:H/In0.53Ga0.47As metal-insulator-semiconductor devices, with a minimum of int...

Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiNx : H/InP and Al/SiNx : H/In0.53Ga0.47As structures by DLTS and conductance transient techniques

Mártil de la Plaza, Ignacio
González Díaz, Germán

April 2000

In this article, we study the influences of the rapid thermal annealing temperature and dielectric c...

Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devices

Prado Millán, Álvaro del
San Andres Serrano, Enrique
Mártil de la Plaza, Ignacio
González Díaz, Germán
Kliefoth, K.
Füssel, W.

February 2004

We have studied and compared the effects of conventional annealing in a forming gas atmosphere (430 ...

Effect of a post-deposition anneal on Al2O3/Si interface properties

Benick, J.
Richter, A.
Li, T.-T.A
Grant, N.E.
McIntosh, K.R.
Ren, Y.
Weber, K.J.
Hermle, M.
Glunz, S.W.

January 2010

While Al2O3 has been proven to provide an excellent level of surface passivation on all sorts of p-t...

Effect of a post-deposition anneal on AL2O3/SI interface properties

Benick, J
Richter, A
Li, Tsu-Tsung (Andrew)
Grant, Nicholas
McIntosh, Keith
Ren, Yongling
Weber, Klaus
Hermle, M
Glunz, Stefan

February 2016

While Al2O3 has been proven to provide an excellent level of surface passivation on all sorts of p-t...

Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators

Mártil de la Plaza, Ignacio
González Díaz, Germán
Prado Millán, Álvaro del
San Andres Serrano, Enrique

July 2003

We present a comparative study of the electrical and structural characteristics of metal-insulator-s...

Extensive Analysis on the Effects of Post-Deposition Annealing for ALD-Deposited Al2O3 on an n-Type Silicon Substrate

Atish Bhattacharjee
Tae-Woo Kim

June 2021

In this study, an investigation was performed on the properties of atomic-layer-deposited aluminum o...

On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD

Mártil de la Plaza, Ignacio
González Díaz, Germán
San Andres Serrano, Enrique

May 2005

We investigate the influence of the used cleaning method and rapid thermal annealing (RTA) condition...

Interfacial state density and conductance-transient three-dimensional profiling of disordered-induced gap states on metal insulator semiconductor capacitors fabricated from electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiOxNyHz films

Mártil de la Plaza, Ignacio
González Díaz, Germán
Prado Millán, Álvaro del

August 2003

An electrical characterization of Al/SiOxNyHz/Si metal-insulator-semiconductor (MIS) structures has ...

Investigation of high-temperature annealing and quenching effects on Al-nSi diodes by C-V and I-V measurements

Wu, CM
Yang, ES

January 1981

The behavior of Al-nSi diodes heat treatment above the eutectic temperature (600 °C) is studied by v...

Impact of the deposition and annealing temperature on the silicon surface passivation of ALD Al\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e films

Bordihn, S Stefan
Kiesow, I
Mertens, V
Engelhart, P
Müller, JW
Kessels, WMM Erwin

January 2012

\u3cp\u3eThe effect of the deposition and annealing temperature on the surface passivation of atomic...

Impact of the deposition and annealing temperature on the silicon surface passivation of ALD Al2O3 films

Bordihn, S.
Kiesow, I.
Mertens, V.
Engelhart, P.
Müller, J.W.
Kessels, W.M.M.

January 2012

The effect of the deposition and annealing temperature on the surface passivation of atomic layer de...

Re-examination of effects of ALD high-k materials on defect reduction in SiGe metal–oxide–semiconductor interfaces

Tsung-En Lee
Kasidit Toprasertpong
Mitsuru Takenaka
Shinichi Takagi

August 2021

We study the impact of the atomic layer deposition high-k gate insulators on metal–oxide–semiconduct...

The Effect of Post annealing on the Characteristics of Si and InGaAs MOS Devices

?????????

February 2018

The Effect of Post Deposition Annealing (PDA) is important for Metal Oxide Semiconductor(MOS) Device...

Conductance transient comparative analysis of electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiNx, SiO2/SiNx, and SiOxNy dielectric films on silicon substrates

Mártil de la Plaza, Ignacio
González Díaz, Germán
Prado Millán, Álvaro del
San Andres Serrano, Enrique

January 2004

An interface quality comparative study of metal-insulator-semiconductor (MIS) structures based on Si...

Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing

Mártil de la Plaza, Ignacio
González Díaz, Germán

July 1999

Ex situ deposited SiNx:H/In0.53Ga0.47As metal-insulator-semiconductor devices, with a minimum of int...

Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiNx : H/InP and Al/SiNx : H/In0.53Ga0.47As structures by DLTS and conductance transient techniques

Mártil de la Plaza, Ignacio
González Díaz, Germán

April 2000

In this article, we study the influences of the rapid thermal annealing temperature and dielectric c...

Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devices

Prado Millán, Álvaro del
San Andres Serrano, Enrique
Mártil de la Plaza, Ignacio
González Díaz, Germán
Kliefoth, K.
Füssel, W.

February 2004

We have studied and compared the effects of conventional annealing in a forming gas atmosphere (430 ...

Effect of a post-deposition anneal on Al2O3/Si interface properties

Benick, J.
Richter, A.
Li, T.-T.A
Grant, N.E.
McIntosh, K.R.
Ren, Y.
Weber, K.J.
Hermle, M.
Glunz, S.W.

January 2010

While Al2O3 has been proven to provide an excellent level of surface passivation on all sorts of p-t...

Effect of a post-deposition anneal on AL2O3/SI interface properties

Benick, J
Richter, A
Li, Tsu-Tsung (Andrew)
Grant, Nicholas
McIntosh, Keith
Ren, Yongling
Weber, Klaus
Hermle, M
Glunz, Stefan

February 2016

While Al2O3 has been proven to provide an excellent level of surface passivation on all sorts of p-t...

Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators

Mártil de la Plaza, Ignacio
González Díaz, Germán
Prado Millán, Álvaro del
San Andres Serrano, Enrique

July 2003

We present a comparative study of the electrical and structural characteristics of metal-insulator-s...

Extensive Analysis on the Effects of Post-Deposition Annealing for ALD-Deposited Al2O3 on an n-Type Silicon Substrate

Atish Bhattacharjee
Tae-Woo Kim

June 2021

In this study, an investigation was performed on the properties of atomic-layer-deposited aluminum o...

On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD

Mártil de la Plaza, Ignacio
González Díaz, Germán
San Andres Serrano, Enrique

May 2005

We investigate the influence of the used cleaning method and rapid thermal annealing (RTA) condition...

Interfacial state density and conductance-transient three-dimensional profiling of disordered-induced gap states on metal insulator semiconductor capacitors fabricated from electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiOxNyHz films

Mártil de la Plaza, Ignacio
González Díaz, Germán
Prado Millán, Álvaro del

August 2003

An electrical characterization of Al/SiOxNyHz/Si metal-insulator-semiconductor (MIS) structures has ...

Investigation of high-temperature annealing and quenching effects on Al-nSi diodes by C-V and I-V measurements

Wu, CM
Yang, ES

January 1981

The behavior of Al-nSi diodes heat treatment above the eutectic temperature (600 °C) is studied by v...

Impact of the deposition and annealing temperature on the silicon surface passivation of ALD Al\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e films

Bordihn, S Stefan
Kiesow, I
Mertens, V
Engelhart, P
Müller, JW
Kessels, WMM Erwin

January 2012

\u3cp\u3eThe effect of the deposition and annealing temperature on the surface passivation of atomic...

Impact of the deposition and annealing temperature on the silicon surface passivation of ALD Al2O3 films

Bordihn, S.
Kiesow, I.
Mertens, V.
Engelhart, P.
Müller, J.W.
Kessels, W.M.M.

January 2012

The effect of the deposition and annealing temperature on the surface passivation of atomic layer de...

Re-examination of effects of ALD high-k materials on defect reduction in SiGe metal–oxide–semiconductor interfaces

Tsung-En Lee
Kasidit Toprasertpong
Mitsuru Takenaka
Shinichi Takagi

August 2021

We study the impact of the atomic layer deposition high-k gate insulators on metal–oxide–semiconduct...

The Effect of Post annealing on the Characteristics of Si and InGaAs MOS Devices

?????????

February 2018

The Effect of Post Deposition Annealing (PDA) is important for Metal Oxide Semiconductor(MOS) Device...

Conductance transient comparative analysis of electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiNx, SiO2/SiNx, and SiOxNy dielectric films on silicon substrates

Mártil de la Plaza, Ignacio
González Díaz, Germán
Prado Millán, Álvaro del
San Andres Serrano, Enrique

January 2004

An interface quality comparative study of metal-insulator-semiconductor (MIS) structures based on Si...

Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing

Mártil de la Plaza, Ignacio
González Díaz, Germán

July 1999

Ex situ deposited SiNx:H/In0.53Ga0.47As metal-insulator-semiconductor devices, with a minimum of int...

Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiNx : H/InP and Al/SiNx : H/In0.53Ga0.47As structures by DLTS and conductance transient techniques

Mártil de la Plaza, Ignacio
González Díaz, Germán

April 2000

In this article, we study the influences of the rapid thermal annealing temperature and dielectric c...

Annealing effects on the interface and insulator properties of plasma deposited Al SiOxNyHz Si devices

Abstract

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Annealing effects on the interface and insulator properties of plasma deposited Al SiOxNyHz Si devices

Abstract

Extracted data

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