Recombination at silicon dangling bonds

In the past, pulsed electrically detected magnetic resonance experiments pEDMR with silicon dangling bonds db in hydrogenated microcrystalline silicon c Si H showed that at low temperatures, two db recombination mechanisms exist where electrons are captured i by dbs directly db dc or ii via band tail states tail db . Here, similar experiments on hydrogenated amorphous silicon a Si H and crystalline silicon silicondioxide interfaces c Si SiO2 are presented. They show that at low temperatures, only the db dc is detectable at dbs in the c Si SiO2 interface Pb centers while in a Si H, only tail db processes are observe