Simulation of the spin dependent dark current in microcrystalline silicon solar cells

We present a detailed analysis of the voltage dependence of dangling bond recombination in microcrystalline silicon c Si H p i n diodes observed in the forward dark current by electrically detected magnetic resonance EDMR . The EDMR response is numerically simulated with physically reasonable parameters that are well suited to fully describe the electronic behavior of the diodes. A sign reversal as observed for amorphous silicon diodes is predicted at high voltages. The effect of series and shunt resistance and material properties such as the defect density on the EDMR signal is discusse