International audienceIn this paper, some high voltage Bipolar Junction Transistors are presented and compared in order to suggest a switch for household appliances with fully turn-on, turn-off control. For the first time, a comparative theoretical study, using 2D simulations, shows that concepts like the "superjunction" improve the static behaviour of conventional BJT. These new structures are compared with a SJMOSFET and an IGBT. The new BJT exhibits lower static losses than SJMOSFET and gives up an interest in bipolar structure
4H-SiC vertical NPN BJTs are attractive power devices with potentials to be used as high power switc...
The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance ...
Afin de répondre aux besoins en management efficace de l’énergie électrique dans les bâtiments intel...
Abstract — In this paper, some high voltage Bipolar Junction Transistors are presented and compared ...
International audienceIn this paper, high voltage Bipolar Junction Transistors are presented and com...
This paper presents for the first time an investigation and comparison of the superjunction IGBT (SJ...
The main achievement of this work is that we show that by intelligently coupling the ideas and desig...
Superjunction has arguably been the most creative and important concept in the power device field si...
The power semiconductor devices control the energy flow in virtually every electric and electronic ...
15 years ago the vertical SuperJunction (SJ) concept conceived for SJ power MOSFETs was the last, ma...
This chapter introduces the bipolar junction transistor (BJT) operation and then presents the theory...
By reducing the distance of the gate diffusions in a vertical channel JFET (junction field effect tr...
International audienceThis paper deals with an innovative low-loss AC switch, named as TBBS (transis...
PN junction diodes and Bipolar junction transistors (BJTs) are used in a wide variety of switching a...
A superjunction (SJ) IGBT(Insulated Gate Bipolar Transistor) with bilateral HK (high permittivity) i...
4H-SiC vertical NPN BJTs are attractive power devices with potentials to be used as high power switc...
The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance ...
Afin de répondre aux besoins en management efficace de l’énergie électrique dans les bâtiments intel...
Abstract — In this paper, some high voltage Bipolar Junction Transistors are presented and compared ...
International audienceIn this paper, high voltage Bipolar Junction Transistors are presented and com...
This paper presents for the first time an investigation and comparison of the superjunction IGBT (SJ...
The main achievement of this work is that we show that by intelligently coupling the ideas and desig...
Superjunction has arguably been the most creative and important concept in the power device field si...
The power semiconductor devices control the energy flow in virtually every electric and electronic ...
15 years ago the vertical SuperJunction (SJ) concept conceived for SJ power MOSFETs was the last, ma...
This chapter introduces the bipolar junction transistor (BJT) operation and then presents the theory...
By reducing the distance of the gate diffusions in a vertical channel JFET (junction field effect tr...
International audienceThis paper deals with an innovative low-loss AC switch, named as TBBS (transis...
PN junction diodes and Bipolar junction transistors (BJTs) are used in a wide variety of switching a...
A superjunction (SJ) IGBT(Insulated Gate Bipolar Transistor) with bilateral HK (high permittivity) i...
4H-SiC vertical NPN BJTs are attractive power devices with potentials to be used as high power switc...
The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance ...
Afin de répondre aux besoins en management efficace de l’énergie électrique dans les bâtiments intel...