Optimization of VLS Growth Process for 4H-SiC P/N Junctions

International audienceP/N junctions have been fabricated with N+ commercial 4H-SiC substrate on which Vapor-Liquid-Solid (VLS) selective epitaxy was used to create a localized p-type doping. The influence of the carrier gas nature (argon or hydrogen) has been investigated in terms of quality of the growth morphology, deposit thickness and electrical behavior of the P/N junction. Distinct results have been observed with a clear improvement when using VLS selective epitaxy under hydrogen