Add to ORKGA low cost fabrication process based on field-plated GaAs pHEMT for X-Band applications is presented by also focusing on the device performances evaluated by means of experimental measurments
A high performance, high yield, and high throughput millimeter-wave, Q band, power pHEMT process tec...
GaAs PHEMT's have been the workhorse for microwave discretes and MMIC's for many years. Fr...
A GaAs pseudomorphic HEMT process has been optimised for high performance and yield at W-band. Sever...
A low cost fabrication process based on field-plated GaAs pHEMT for X-Band applications is presented...
Very high voltage breakdown pHEMTs have been successfully developed by implementing a field-plate (F...
The integration of power and low noise amplifiers on a single chip offers the opportunity to achieve...
High voltage GaAs pHEMT technology with field plated gates has been in development at TriQuint since...
High voltage GaAs pHEMT technology with field plated gates has been in development at TriQuint since...
This paper presents the results obtained both by experimental measurements and numerical simulations...
This paper presents the results obtained both by experimental measurements and numerical simulations...
The aim of this chapter is to provide to the reader insights into field plate operation and itsgeome...
High Breakdown Voltage pHEMTs have been successfully developed by implementing a field-plate (FP) st...
In this study, a novel manufacturing process for a 0.1 lm T-gate is investigated for producing a hig...
The optimization of a field plated pHEMT structure has been presented. It has been shown that by opt...
This paper is about the dc and microwave characterization of the first high electron mobility transi...
A high performance, high yield, and high throughput millimeter-wave, Q band, power pHEMT process tec...
GaAs PHEMT's have been the workhorse for microwave discretes and MMIC's for many years. Fr...
A GaAs pseudomorphic HEMT process has been optimised for high performance and yield at W-band. Sever...
A low cost fabrication process based on field-plated GaAs pHEMT for X-Band applications is presented...
Very high voltage breakdown pHEMTs have been successfully developed by implementing a field-plate (F...
The integration of power and low noise amplifiers on a single chip offers the opportunity to achieve...
High voltage GaAs pHEMT technology with field plated gates has been in development at TriQuint since...
High voltage GaAs pHEMT technology with field plated gates has been in development at TriQuint since...
This paper presents the results obtained both by experimental measurements and numerical simulations...
This paper presents the results obtained both by experimental measurements and numerical simulations...
The aim of this chapter is to provide to the reader insights into field plate operation and itsgeome...
High Breakdown Voltage pHEMTs have been successfully developed by implementing a field-plate (FP) st...
In this study, a novel manufacturing process for a 0.1 lm T-gate is investigated for producing a hig...
The optimization of a field plated pHEMT structure has been presented. It has been shown that by opt...
This paper is about the dc and microwave characterization of the first high electron mobility transi...
A high performance, high yield, and high throughput millimeter-wave, Q band, power pHEMT process tec...
GaAs PHEMT's have been the workhorse for microwave discretes and MMIC's for many years. Fr...
A GaAs pseudomorphic HEMT process has been optimised for high performance and yield at W-band. Sever...