Add to ORKGThe degradation mechanisms induced in GaN-based HEMTs when reverse gate-bias stress are applied have been presented and discussed
In this paper, the degradation of AlGaN/GaN high-electron mobility transistors (HEMTs) is investigat...
This paper reports the results of degradation tests performed at Vgs = -5V and increasing Vds levels...
We report in this paper the effect of the reverse bias stress in AlGaN/GaN HEMTs, observing the curr...
The degradation mechanisms induced in GaN-based HEMTs when reverse gate-bias stress are applied have...
GaN HEMT degradation induced by reverse gate bias stress methods has been investigated by means of e...
This paper describes a deep investigation of the degradation mechanisms induced by off-state and on-...
This paper analyzes the kinetics of the gate-edge degradation on GaN HEMTs by means of constant volt...
This paper analyzes the reverse-bias degradation of GaN-based HEMTs. Experimental evidence collected...
This paper describes a detailed analysis of the time-dependent degradation kinetics of GaN-based hig...
This paper describes a deep investigation of the degradation mechanisms induced by off-state and on-...
This paper analyzes the reverse-bias degradation of GaN-based HEMTs. Experimental evidence collected...
This paper investigates the degradation of GaN-based HEMTs with p-type gate submitted to positive ga...
The reliability of GaN HEMTs under RF stress has been evaluated and correlated with DC stress and cu...
The reliability of GaN HEMTs under RF stress has been evaluated and correlated with DC stress and cu...
The degradation of packaged GaN HEMTs for high power applications has been studied under long term r...
In this paper, the degradation of AlGaN/GaN high-electron mobility transistors (HEMTs) is investigat...
This paper reports the results of degradation tests performed at Vgs = -5V and increasing Vds levels...
We report in this paper the effect of the reverse bias stress in AlGaN/GaN HEMTs, observing the curr...
The degradation mechanisms induced in GaN-based HEMTs when reverse gate-bias stress are applied have...
GaN HEMT degradation induced by reverse gate bias stress methods has been investigated by means of e...
This paper describes a deep investigation of the degradation mechanisms induced by off-state and on-...
This paper analyzes the kinetics of the gate-edge degradation on GaN HEMTs by means of constant volt...
This paper analyzes the reverse-bias degradation of GaN-based HEMTs. Experimental evidence collected...
This paper describes a detailed analysis of the time-dependent degradation kinetics of GaN-based hig...
This paper describes a deep investigation of the degradation mechanisms induced by off-state and on-...
This paper analyzes the reverse-bias degradation of GaN-based HEMTs. Experimental evidence collected...
This paper investigates the degradation of GaN-based HEMTs with p-type gate submitted to positive ga...
The reliability of GaN HEMTs under RF stress has been evaluated and correlated with DC stress and cu...
The reliability of GaN HEMTs under RF stress has been evaluated and correlated with DC stress and cu...
The degradation of packaged GaN HEMTs for high power applications has been studied under long term r...
In this paper, the degradation of AlGaN/GaN high-electron mobility transistors (HEMTs) is investigat...
This paper reports the results of degradation tests performed at Vgs = -5V and increasing Vds levels...
We report in this paper the effect of the reverse bias stress in AlGaN/GaN HEMTs, observing the curr...