Topics
2DEGPerson
A model based on the key parameters of the device, such as the 2DEG carrier concentration and its mobility, as well as the active area geometry, will be presented and discussed
While still expanding in the microwave arena, GaN-based HEMTs are increasingly making their way into...
In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point...
International audienceIn this paper, the authors present a behavioral model of a GaN normally ON HEM...
A model based on the key parameters of the device, such as the 2DEG carrier concentration and its mo...
The GaN high-electron mobility transistor (HEMT) structure has been widely investigated, particularl...
The GaN high-electron mobility transistor (HEMT) structure has been widely investigated, particularl...
This work describes a comprehensive approach to thermal and electro-thermal modeling of GaN HEMT dev...
This work describes a comprehensive approach to thermal and electro-thermal modeling of GaN HEMT dev...
GaN HEMTs are widely used in switching power amplifiers topologies to achieve high power density at ...
In this paper, physical modeling of a GaN HEMT is proposed, with the objective of device design opti...
This paper presents characteristics of the GaN HEMT and proposes controlled switching of the GaN Pow...
Gallium nitride high electron mobility transistors (GaN HEMTs) have been commonly cited to significa...
We describe an approach to modelling of power GaN HEMTs, aimed at full sys-tem optimization through ...
We describe an approach to modelling of power GaN HEMTs, aimed at full sys-tem optimization through ...
International audienceIn this paper, the authors present a behavioral model of a GaN normally ON HEM...
While still expanding in the microwave arena, GaN-based HEMTs are increasingly making their way into...
In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point...
International audienceIn this paper, the authors present a behavioral model of a GaN normally ON HEM...
A model based on the key parameters of the device, such as the 2DEG carrier concentration and its mo...
The GaN high-electron mobility transistor (HEMT) structure has been widely investigated, particularl...
The GaN high-electron mobility transistor (HEMT) structure has been widely investigated, particularl...
This work describes a comprehensive approach to thermal and electro-thermal modeling of GaN HEMT dev...
This work describes a comprehensive approach to thermal and electro-thermal modeling of GaN HEMT dev...
GaN HEMTs are widely used in switching power amplifiers topologies to achieve high power density at ...
In this paper, physical modeling of a GaN HEMT is proposed, with the objective of device design opti...
This paper presents characteristics of the GaN HEMT and proposes controlled switching of the GaN Pow...
Gallium nitride high electron mobility transistors (GaN HEMTs) have been commonly cited to significa...
We describe an approach to modelling of power GaN HEMTs, aimed at full sys-tem optimization through ...
We describe an approach to modelling of power GaN HEMTs, aimed at full sys-tem optimization through ...
International audienceIn this paper, the authors present a behavioral model of a GaN normally ON HEM...
While still expanding in the microwave arena, GaN-based HEMTs are increasingly making their way into...
In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point...
International audienceIn this paper, the authors present a behavioral model of a GaN normally ON HEM...
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