Add to ORKGOn-resistance (RDSon) degradation is a well-known issue in AlGaN/GaN HEMTs technology for power applications [1,2], and is usually observed when the device is rapidly switched from off- to on-state condition. The introduction of field-plate terminals has proven to be a viable solution in order to mitigate the off-state electric fields and consequently improve the dynamic on-resistance behavior [2]. In this work the effect of different field-plate geometry will be investigated. Moreover, by using different characterization techniques, some insights on the trapping mechanisms causing the RDSon degradation will also be presented
This paper investigates the influence of field-plates on the trapping effects in GaN HEMTs. Conclusi...
[[abstract]]GaN-GaN/AlGaN/GaN HEMT for switching applications are becoming a reality and finding the...
Gallium Nitride based HEMT devices are very popularly used in high power switching applications, hig...
On-resistance (RDSon) degradation is a well-known issue in AlGaN/GaN HEMTs technology for power appl...
Reliability enhancement of AlGaN / GaN HEMT is a significant thrust area due to rapidly improving ma...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
AbstractThis paper examines the effect of the field plate structure on the RF performance of AlGaN/G...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN/GaN HEMTs by comparin...
An investigation on the field plate technique in AlGaN/GaN power HEMTs is presented. The critical ge...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
In this work, an analysis of the impact of drain field plate (FP) length on the semi-ON degradation ...
Current collapse measurements have been performed for AlGaN/GaN high-electron-mobility transistors h...
This paper investigates the influence of field-plates on the trapping effects in GaN HEMTs. Conclusi...
[[abstract]]GaN-GaN/AlGaN/GaN HEMT for switching applications are becoming a reality and finding the...
Gallium Nitride based HEMT devices are very popularly used in high power switching applications, hig...
On-resistance (RDSon) degradation is a well-known issue in AlGaN/GaN HEMTs technology for power appl...
Reliability enhancement of AlGaN / GaN HEMT is a significant thrust area due to rapidly improving ma...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
AbstractThis paper examines the effect of the field plate structure on the RF performance of AlGaN/G...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN/GaN HEMTs by comparin...
An investigation on the field plate technique in AlGaN/GaN power HEMTs is presented. The critical ge...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
In this work, an analysis of the impact of drain field plate (FP) length on the semi-ON degradation ...
Current collapse measurements have been performed for AlGaN/GaN high-electron-mobility transistors h...
This paper investigates the influence of field-plates on the trapping effects in GaN HEMTs. Conclusi...
[[abstract]]GaN-GaN/AlGaN/GaN HEMT for switching applications are becoming a reality and finding the...
Gallium Nitride based HEMT devices are very popularly used in high power switching applications, hig...