The structural, electronic and elastic properties of B2 structure Hafnium compounds were investigated by means of first-principles calculations based on the density functional theory within generalized gradient approximation (GGA) and local density approximation (LDA) methods. Both GGA and LDA methods can make acceptable optimized lattice parameters in comparison with experimental parameters. Therefore, both GGA and LDA methods are used to predict the electronic and elastic properties of B2 HfX (X = Os, Ir and Pt) compounds. Initially, the calculated formation enthalpies have confirmed the order of thermodynamic stability as HfPt > HfIr > HfOs. Secondly, the electronic structures are analyzed to explain the bonding characters and stab...
The phase stability of the hafnium dioxide compounds HfO2, a novel material with a wide range of app...
A systematic first-principles study using density functional theory was performed on dopants in HfO2...
Ultrathin two-dimensional transition metal oxides are highly desirable as promising materials for en...
The structural, electronic and elastic properties of B2 structure Hafnium compounds were investigate...
We have performed first-principles calculations of the structural, electronic, mechanical, and vibra...
First-principles calculations combined with particle swarm optimisation technique are employed to pr...
The ground state physical properties of the newly synthesized 312 MAX compound, Hf3AlC2 have been in...
The ground state physical properties of the newly synthesized 312 MAX compound, Hf3AlC2 have been in...
YILDIZ, Yasin Gokturk/0000-0002-1391-1888WOS: 000517222900002Ab-initio calculations were performed t...
Ab-initio calculations were performed to reveal and thoroughly understand the structural, electronic...
WOS: 000396759100004The structural, elastic, electronic and phonon properties of HfX (X = Rh, Ru and...
The stability and bonding properties of Hf2Fe, Hf2Co and Hf2Rh are investigated by means of ab initi...
The stability and bonding properties of Hf2Fe, Hf2Co and Hf2Rh are investigated by means of ab initi...
Background: Hafnium Dioxide (HfO2) represents a hopeful material for gate dielectric thin films in t...
Background: Hafnium Dioxide (HfO2) represents a hopeful material for gate dielectric thin films in t...
The phase stability of the hafnium dioxide compounds HfO2, a novel material with a wide range of app...
A systematic first-principles study using density functional theory was performed on dopants in HfO2...
Ultrathin two-dimensional transition metal oxides are highly desirable as promising materials for en...
The structural, electronic and elastic properties of B2 structure Hafnium compounds were investigate...
We have performed first-principles calculations of the structural, electronic, mechanical, and vibra...
First-principles calculations combined with particle swarm optimisation technique are employed to pr...
The ground state physical properties of the newly synthesized 312 MAX compound, Hf3AlC2 have been in...
The ground state physical properties of the newly synthesized 312 MAX compound, Hf3AlC2 have been in...
YILDIZ, Yasin Gokturk/0000-0002-1391-1888WOS: 000517222900002Ab-initio calculations were performed t...
Ab-initio calculations were performed to reveal and thoroughly understand the structural, electronic...
WOS: 000396759100004The structural, elastic, electronic and phonon properties of HfX (X = Rh, Ru and...
The stability and bonding properties of Hf2Fe, Hf2Co and Hf2Rh are investigated by means of ab initi...
The stability and bonding properties of Hf2Fe, Hf2Co and Hf2Rh are investigated by means of ab initi...
Background: Hafnium Dioxide (HfO2) represents a hopeful material for gate dielectric thin films in t...
Background: Hafnium Dioxide (HfO2) represents a hopeful material for gate dielectric thin films in t...
The phase stability of the hafnium dioxide compounds HfO2, a novel material with a wide range of app...
A systematic first-principles study using density functional theory was performed on dopants in HfO2...
Ultrathin two-dimensional transition metal oxides are highly desirable as promising materials for en...