To achieve low contact resistance between metal and III-V material, transmission-line-model (TLM) structures of molybdenum (Mo) were fabricated on indium phosphide (InP) substrate on the top of an indium gallium arsenide (InGaAs) layer grown by molecular beam epitaxy. The contact layer was prepared using a digital etch procedure before metal deposition. The contact resistivity was found to decrease significantly with the cleaning process. High Resolution Transmission & Scanning Electron Microscopy (HRTEM & HRSTEM) investigations revealed that the surface roughness of treated samples was increased. Further analysis of the metal-semiconductor interface using Energy Electron Loss Spectroscopy (EELS) showed that the amount of oxides (In...
Etchant containing chloroplatinous or chloroplatinic acid greatly reduces contact resistance between...
The effect of inserting ultra-thin atomic layer deposited Al2O3 dielectric layers (1 nm and 2 nm thi...
Despite the extensive ongoing research on MoS2 field effect transistors (FETs), the key role of devi...
This work refers basically to the detailed understanding of the natural phenomena in real tunneling ...
This work refers basically to the detailed understanding of the natural phenomena in real tunneling ...
III-V semiconductors have emerged as the leading candidate to replace Si as the n-FET channel materi...
Two dimensional (2D) transitional metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) h...
The electrical properties of Al/In ohmic contacts to GaAs are correlated with the metallurgical prop...
The ultimate scaling limit of the Si-based complementary metal-oxide semiconductor (CMOS) technology...
Not only are amorphous oxide semiconductor thin film transistors(TFTs) extremely sensitive to the pr...
In this article, the authors investigate the formation and removal of resist residues with the main ...
Creating high-quality, low-resistance contacts is essential for the development of electronic applic...
textThe performance scaling of metal-oxide-semiconductor field-effect-transistors (MOSFETs) has been...
Today all transistors in integrated circuits are fabricated on Si substrates, in some cases alloyed ...
This paper presents a comparison of Au-Au microcontacts fabricated with planar and engineered lower ...
Etchant containing chloroplatinous or chloroplatinic acid greatly reduces contact resistance between...
The effect of inserting ultra-thin atomic layer deposited Al2O3 dielectric layers (1 nm and 2 nm thi...
Despite the extensive ongoing research on MoS2 field effect transistors (FETs), the key role of devi...
This work refers basically to the detailed understanding of the natural phenomena in real tunneling ...
This work refers basically to the detailed understanding of the natural phenomena in real tunneling ...
III-V semiconductors have emerged as the leading candidate to replace Si as the n-FET channel materi...
Two dimensional (2D) transitional metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) h...
The electrical properties of Al/In ohmic contacts to GaAs are correlated with the metallurgical prop...
The ultimate scaling limit of the Si-based complementary metal-oxide semiconductor (CMOS) technology...
Not only are amorphous oxide semiconductor thin film transistors(TFTs) extremely sensitive to the pr...
In this article, the authors investigate the formation and removal of resist residues with the main ...
Creating high-quality, low-resistance contacts is essential for the development of electronic applic...
textThe performance scaling of metal-oxide-semiconductor field-effect-transistors (MOSFETs) has been...
Today all transistors in integrated circuits are fabricated on Si substrates, in some cases alloyed ...
This paper presents a comparison of Au-Au microcontacts fabricated with planar and engineered lower ...
Etchant containing chloroplatinous or chloroplatinic acid greatly reduces contact resistance between...
The effect of inserting ultra-thin atomic layer deposited Al2O3 dielectric layers (1 nm and 2 nm thi...
Despite the extensive ongoing research on MoS2 field effect transistors (FETs), the key role of devi...