Our numerical modelling of the Czochralski growth of single crystalline β-Ga 2 O 3 crystals (monoclinic symmetry) starts at the 2D heat transport analysis within the crystal growth furnace, proceeds with the 3D heat transport and fluid flow analysis in the crystal-melt-crucible arrangement and targets the 3D thermal stress analysis within the β-Ga 2 O 3 crystal. In order to perform the stress analysis, we measured the thermal expansion coefficients and the elastic stiffness coefficients in two samples of a β-Ga 2 O 3 crystal grown at IKZ. Additionally, we analyse published data of β-Ga 2 O 3 material properties and use data from literature for comparative calculations. The computat...
Czochralski (Cz) technique, which is used for growing single crystals, has dominated the production ...
A model for computing thermal stress inside a crystal with facets is presented. Using a systematical...
Production of perfect crystals, free of residual strain and dislocations and with prescribed dopant ...
Single crystal of oxides, such as Al_2O_3 and LiNbO_3, are prepared by Czochralski method. Melted ox...
As a crystal grows, the temperature distribution of the crystal and melt will change. It is necessar...
In the process of crystal growth by Czochralski technique, lower part and core of the crystal are wa...
The coefficients of thermal expansion (CTEs) of single crystalline, monoclinic β-Ga2O3 were determin...
A numerical scheme was developed to compute the thermal and stress fields of the Czochralski process...
Single crystals of various materials play a key role in many branches of the industry and a great nu...
This paper determines all the 13 elastic constants Cij of monoclinic β-Ga2O3, which has never been a...
For a Czochralski crystal growth of sapphire, influence of radiative heat transfer and gas convectio...
In this paper, the influence of various crystal heights to the crystal/melt interface shape and ther...
SIGLEAvailable from TIB Hannover: RO 7722(263) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Te...
International audienceIn this article, lattice thermal conductivity of α-phase Ga 2 O 3 is investiga...
In this paper we present a semi-analytical thermal stress solution for directional growth of type II...
Czochralski (Cz) technique, which is used for growing single crystals, has dominated the production ...
A model for computing thermal stress inside a crystal with facets is presented. Using a systematical...
Production of perfect crystals, free of residual strain and dislocations and with prescribed dopant ...
Single crystal of oxides, such as Al_2O_3 and LiNbO_3, are prepared by Czochralski method. Melted ox...
As a crystal grows, the temperature distribution of the crystal and melt will change. It is necessar...
In the process of crystal growth by Czochralski technique, lower part and core of the crystal are wa...
The coefficients of thermal expansion (CTEs) of single crystalline, monoclinic β-Ga2O3 were determin...
A numerical scheme was developed to compute the thermal and stress fields of the Czochralski process...
Single crystals of various materials play a key role in many branches of the industry and a great nu...
This paper determines all the 13 elastic constants Cij of monoclinic β-Ga2O3, which has never been a...
For a Czochralski crystal growth of sapphire, influence of radiative heat transfer and gas convectio...
In this paper, the influence of various crystal heights to the crystal/melt interface shape and ther...
SIGLEAvailable from TIB Hannover: RO 7722(263) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Te...
International audienceIn this article, lattice thermal conductivity of α-phase Ga 2 O 3 is investiga...
In this paper we present a semi-analytical thermal stress solution for directional growth of type II...
Czochralski (Cz) technique, which is used for growing single crystals, has dominated the production ...
A model for computing thermal stress inside a crystal with facets is presented. Using a systematical...
Production of perfect crystals, free of residual strain and dislocations and with prescribed dopant ...