The major barrier for optical quantum information technologies is the absence of reliable single photons sources providing non-classical light states on demand which can be easily and reliably integrated with standard processing protocols for quantum device fabrication. New methods of generation at room temperature of single photons are therefore needed. Heralded single photon sources are presently being sought based on different methods built on different materials. Silicon Carbide (SiC) has the potentials to serve as the preferred material for quantum applications. Here, we review the latest advances in single photon generation at room temperatures based on SiC
In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide (SiC) ha...
Bright room temperature single photon emission from isolated defects in bulk 4H silicon carbide (SiC...
Bright room temperature single photon emission from isolated defects in bulk 4H silicon carbide (SiC...
The major barrier for optical quantum information technologies is the absence of reliable single pho...
The major barrier for optical quantum information technologies is the absence of reliable single pho...
The major barrier for optical quantum information technologies is the absence of reliable single pho...
We report the first observation of stable single photon sources in an electronic and photonic device...
: The major barrier for optical quantum information technologies is the absence of reliable single p...
Single-photon emitters (SPEs) play an important role in a number of quantum information tasks such a...
Electrically driven single-photon emitting devices have immediate applications in quantum cryptograp...
This paper summarizes key findings in single-photon generation from deep level defects in silicon ca...
Color centers in silicon carbide have recently emerged as one of the most promising emitters for bri...
© 2016 Dr. Alexander LohrmannSingle-photon sources are considered a key component for future quantum...
Defects are common in many materials and some were regarded for years as detrimental. Recently with ...
Defects are common in many materials and some were regarded for years as detrimental. Recently with ...
In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide (SiC) ha...
Bright room temperature single photon emission from isolated defects in bulk 4H silicon carbide (SiC...
Bright room temperature single photon emission from isolated defects in bulk 4H silicon carbide (SiC...
The major barrier for optical quantum information technologies is the absence of reliable single pho...
The major barrier for optical quantum information technologies is the absence of reliable single pho...
The major barrier for optical quantum information technologies is the absence of reliable single pho...
We report the first observation of stable single photon sources in an electronic and photonic device...
: The major barrier for optical quantum information technologies is the absence of reliable single p...
Single-photon emitters (SPEs) play an important role in a number of quantum information tasks such a...
Electrically driven single-photon emitting devices have immediate applications in quantum cryptograp...
This paper summarizes key findings in single-photon generation from deep level defects in silicon ca...
Color centers in silicon carbide have recently emerged as one of the most promising emitters for bri...
© 2016 Dr. Alexander LohrmannSingle-photon sources are considered a key component for future quantum...
Defects are common in many materials and some were regarded for years as detrimental. Recently with ...
Defects are common in many materials and some were regarded for years as detrimental. Recently with ...
In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide (SiC) ha...
Bright room temperature single photon emission from isolated defects in bulk 4H silicon carbide (SiC...
Bright room temperature single photon emission from isolated defects in bulk 4H silicon carbide (SiC...