Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs
- CHINI, Alessandro
- SOCI, FABIO
- FANTINI, Fausto
- Nanni, A.
- Pantellini, A.
- Lanzieri, C.
- Meneghesso, G.
- Zanoni, E.
DOIAbstract
GaN on SiC HEMTs fabricated with different gate-connected field plate structures have been tested by means of RF reliability tests. The increase in field-plate length yielded an improvement of both the dynamic and the reliability performance during RF testing. Results are thus suggesting that reliability in field-plate devices can be improved by a proper design of the field-plate geometry
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