We present a high resolution electron energy loss spectroscopy investigation of the Bi/[n-type GaAs(110)] system. Analysis of the elastic peak intensity, of the substrate's Fuchs-Kliewer phonon and dopant-induced free carrier plasmon, shows the influence exerted on GaAs by the first semiconducting Bi monolayer and by the subsequent semimetallic clusters at higher coverage
We investigated the space-charge layer at the surface of heavily doped GaAs(110) by means of HREELS,...
We investigated the space-charge layer at the surface of heavily doped GaAs(110) by means of HREELS,...
We present a high-resolution electron-energy-loss-spectroscopy investigation of the GaAs(110)-Bi(1 x...
We present a high resolution electron energy loss spectroscopy investigation of the Bi/[n-type GaAs(...
We present a high resolution electron energy loss spectroscopy investigation of the Bi/[n-type GaAs(...
The collective excitations and the metallization of the Bi/GaAs(I 10) interface grown at room temper...
A high resolution electron-energy-loss spectroscopy investigation of the Bi/[n-GaAs(110)] interface ...
A high resolution electron-energy-loss spectroscopy investigation of the Bi/[n-GaAs(110)] interface ...
The collective excitations and the metallization of the Bi/GaAs(I 10) interface grown at room temper...
The collective excitations and the metallization of the Bi/GaAs(I 10) interface grown at room temper...
The interplay between surface phonons and plasmons in n-doped GaAs(110) surface have been investigat...
We present a high-resolution electron-energy-loss analysis of the interface system Cs/GaAs(110) grow...
We present high-resolution electron energy loss measurements on heavily doped p-type GaAs(110), expl...
We present high-resolution electron energy loss measurements on heavily doped p-type GaAs(110), expl...
We present high-resolution electron energy loss measurements on heavily doped p-type GaAs(110), expl...
We investigated the space-charge layer at the surface of heavily doped GaAs(110) by means of HREELS,...
We investigated the space-charge layer at the surface of heavily doped GaAs(110) by means of HREELS,...
We present a high-resolution electron-energy-loss-spectroscopy investigation of the GaAs(110)-Bi(1 x...
We present a high resolution electron energy loss spectroscopy investigation of the Bi/[n-type GaAs(...
We present a high resolution electron energy loss spectroscopy investigation of the Bi/[n-type GaAs(...
The collective excitations and the metallization of the Bi/GaAs(I 10) interface grown at room temper...
A high resolution electron-energy-loss spectroscopy investigation of the Bi/[n-GaAs(110)] interface ...
A high resolution electron-energy-loss spectroscopy investigation of the Bi/[n-GaAs(110)] interface ...
The collective excitations and the metallization of the Bi/GaAs(I 10) interface grown at room temper...
The collective excitations and the metallization of the Bi/GaAs(I 10) interface grown at room temper...
The interplay between surface phonons and plasmons in n-doped GaAs(110) surface have been investigat...
We present a high-resolution electron-energy-loss analysis of the interface system Cs/GaAs(110) grow...
We present high-resolution electron energy loss measurements on heavily doped p-type GaAs(110), expl...
We present high-resolution electron energy loss measurements on heavily doped p-type GaAs(110), expl...
We present high-resolution electron energy loss measurements on heavily doped p-type GaAs(110), expl...
We investigated the space-charge layer at the surface of heavily doped GaAs(110) by means of HREELS,...
We investigated the space-charge layer at the surface of heavily doped GaAs(110) by means of HREELS,...
We present a high-resolution electron-energy-loss-spectroscopy investigation of the GaAs(110)-Bi(1 x...
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