Add to ORKGBy means of electron spectrosocpies, HREELS and UPS, the Electronic and Dielectric properties of the Bismuth and Antimony interfaces with GaAs(110) have been studied
We present theoretical calculations of the electronic structure of a Sb/GaAs(110) interface in a sub...
We present theoretical calculations of the electronic structure of a Sb/GaAs(110) interface in a sub...
International audienceTopological insulators (TIs) are known as promising materials for new nanoelec...
By means of electron spectrosocpies, HREELS and UPS, the Electronic and Dielectric properties of t...
A high resolution electron-energy-loss spectroscopy investigation of the Bi/[n-GaAs(110)] interface ...
A high resolution electron-energy-loss spectroscopy investigation of the Bi/[n-GaAs(110)] interface ...
The collective excitations and the metallization of the Bi/GaAs(I 10) interface grown at room temper...
We present a high-resolution electron-energy-loss-spectroscopy study of the electronic and dielec...
The collective excitations and the metallization of the Bi/GaAs(I 10) interface grown at room temper...
We have investigated the room temperature deposition of ultrathin bismuth layers on GaAs(110) surfac...
We have investigated the room temperature deposition of ultrathin bismuth layers on GaAs(110) surfac...
The collective excitations and the metallization of the Bi/GaAs(I 10) interface grown at room temper...
We present the results of theoretical calculations of the electronic structure of the Sb/GaAs(110) i...
We present the results of theoretical calculations of the electronic structure of the Sb/GaAs(110) i...
The overlayer growth and electronic properties of the Bi/GaSb(110) interface and of the two-dimensio...
We present theoretical calculations of the electronic structure of a Sb/GaAs(110) interface in a sub...
We present theoretical calculations of the electronic structure of a Sb/GaAs(110) interface in a sub...
International audienceTopological insulators (TIs) are known as promising materials for new nanoelec...
By means of electron spectrosocpies, HREELS and UPS, the Electronic and Dielectric properties of t...
A high resolution electron-energy-loss spectroscopy investigation of the Bi/[n-GaAs(110)] interface ...
A high resolution electron-energy-loss spectroscopy investigation of the Bi/[n-GaAs(110)] interface ...
The collective excitations and the metallization of the Bi/GaAs(I 10) interface grown at room temper...
We present a high-resolution electron-energy-loss-spectroscopy study of the electronic and dielec...
The collective excitations and the metallization of the Bi/GaAs(I 10) interface grown at room temper...
We have investigated the room temperature deposition of ultrathin bismuth layers on GaAs(110) surfac...
We have investigated the room temperature deposition of ultrathin bismuth layers on GaAs(110) surfac...
The collective excitations and the metallization of the Bi/GaAs(I 10) interface grown at room temper...
We present the results of theoretical calculations of the electronic structure of the Sb/GaAs(110) i...
We present the results of theoretical calculations of the electronic structure of the Sb/GaAs(110) i...
The overlayer growth and electronic properties of the Bi/GaSb(110) interface and of the two-dimensio...
We present theoretical calculations of the electronic structure of a Sb/GaAs(110) interface in a sub...
We present theoretical calculations of the electronic structure of a Sb/GaAs(110) interface in a sub...
International audienceTopological insulators (TIs) are known as promising materials for new nanoelec...