Add to ORKGA new Monte Carlo algorithm for electron transport at high electric fields in Si is presented
168 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1983.The study of high field trans...
In this work we have undertaken a comparison of several previously reported computer codes which sol...
The theory of electron transport in semiconductors is traditionally formulated in terms of the semic...
A new Monte Carlo algorithm for electron transport at high electric fields in Si is presented
A new Monte Carlo algorithm for electron transport at high electric fields in Si is presented
A new silicon model for electron transport at high electric fields is presented. The model features ...
Monte Carlo (MC) device simulations of high energy electrons and holes in Si-n-MOSFET's are presente...
In this thesis, the transport of electrons in silicon devices is studied numerically by solving the ...
The hydrodynamic approach of modeling the high-field electron transport in silicon is pursued in thi...
The Monte Carlo method is a very general mathematical tool for the solution of a large variety of pr...
An overview on the theoretical background of transport physics is presented together with a discussi...
International audienceThe electron transport in silicon at low and very low energy (10 eV-2 keV) is ...
A new model for impact ionization in Si is presented, which goes beyond the limitations of the Keldy...
A new microscopic silicon model for hole transport at high electric fields featuring two valence ban...
Electron transport in pseudomorphically-grown silicon on relaxed (001) Si1-xGex is investigated usin...
168 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1983.The study of high field trans...
In this work we have undertaken a comparison of several previously reported computer codes which sol...
The theory of electron transport in semiconductors is traditionally formulated in terms of the semic...
A new Monte Carlo algorithm for electron transport at high electric fields in Si is presented
A new Monte Carlo algorithm for electron transport at high electric fields in Si is presented
A new silicon model for electron transport at high electric fields is presented. The model features ...
Monte Carlo (MC) device simulations of high energy electrons and holes in Si-n-MOSFET's are presente...
In this thesis, the transport of electrons in silicon devices is studied numerically by solving the ...
The hydrodynamic approach of modeling the high-field electron transport in silicon is pursued in thi...
The Monte Carlo method is a very general mathematical tool for the solution of a large variety of pr...
An overview on the theoretical background of transport physics is presented together with a discussi...
International audienceThe electron transport in silicon at low and very low energy (10 eV-2 keV) is ...
A new model for impact ionization in Si is presented, which goes beyond the limitations of the Keldy...
A new microscopic silicon model for hole transport at high electric fields featuring two valence ban...
Electron transport in pseudomorphically-grown silicon on relaxed (001) Si1-xGex is investigated usin...
168 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1983.The study of high field trans...
In this work we have undertaken a comparison of several previously reported computer codes which sol...
The theory of electron transport in semiconductors is traditionally formulated in terms of the semic...