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ionizationElection
Monte Carlo simulationMusic genre
An advanced model for impact ionization for electrons is si is presented and implemented in a Monte Carlo simulation
A new Monte Carlo algorithm for electron transport at high electric fields in Si is presented
The Monte Carlo (MC) simulation of electron and hole impact ionization rates for 4H- and 6H-SiC in h...
International audienceA comprehensive approach is developed for the simulation of Single Particle Di...
An advanced model for impact ionization for electrons is si is presented and implemented in a Monte ...
A new model for impact ionization in Si is presented, which goes beyond the limitations of the Keldy...
The energy-dependent impact ionization rate in silicon is derived by a first-order pertur-bation the...
A microscopic, single-particle view of impact ionization in silicon is obtained from a modified full...
The ensemble Monte Carlo simulation of deep submicron silicon MOSFET with length is performed. ...
Measurements and Monte Carlo simulations of impact ionization in the base-collector region of SiGe H...
Monte Carlo (MC) device simulations of high energy electrons and holes in Si-n-MOSFET's are presente...
Nous avons développé une simulation par la méthode de Monte Carlo pour du silicium et de l'AsGa en i...
The presented Monte Carlo model simulates excitation of the electron subsystem of semiconductors by ...
International audienceThe electron transport in silicon at low and very low energy (10 eV-2 keV) is ...
A theoretical and experimental investigation on the electron impact ionization in silicon has been c...
A simplified hydrodynamic (HD) model has been developed for the study of impact ionization (II) phen...
A new Monte Carlo algorithm for electron transport at high electric fields in Si is presented
The Monte Carlo (MC) simulation of electron and hole impact ionization rates for 4H- and 6H-SiC in h...
International audienceA comprehensive approach is developed for the simulation of Single Particle Di...
An advanced model for impact ionization for electrons is si is presented and implemented in a Monte ...
A new model for impact ionization in Si is presented, which goes beyond the limitations of the Keldy...
The energy-dependent impact ionization rate in silicon is derived by a first-order pertur-bation the...
A microscopic, single-particle view of impact ionization in silicon is obtained from a modified full...
The ensemble Monte Carlo simulation of deep submicron silicon MOSFET with length is performed. ...
Measurements and Monte Carlo simulations of impact ionization in the base-collector region of SiGe H...
Monte Carlo (MC) device simulations of high energy electrons and holes in Si-n-MOSFET's are presente...
Nous avons développé une simulation par la méthode de Monte Carlo pour du silicium et de l'AsGa en i...
The presented Monte Carlo model simulates excitation of the electron subsystem of semiconductors by ...
International audienceThe electron transport in silicon at low and very low energy (10 eV-2 keV) is ...
A theoretical and experimental investigation on the electron impact ionization in silicon has been c...
A simplified hydrodynamic (HD) model has been developed for the study of impact ionization (II) phen...
A new Monte Carlo algorithm for electron transport at high electric fields in Si is presented
The Monte Carlo (MC) simulation of electron and hole impact ionization rates for 4H- and 6H-SiC in h...
International audienceA comprehensive approach is developed for the simulation of Single Particle Di...
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