Add to ORKGNew failure mechanisms induced by hot-electrons in AlGaAs/InGaAs pseudomorphic HEMT's have been identified by means of accelerated testing of commercial devices from four different supplier
The effects of hot-electron stress on electrical properties in AlGaAs/InGaAs pseudomorphic high elec...
In this work we show for the first time evidence of gate-drain breakdown walkout due to hot electron...
In this work we show for the first time evidence of gate-drain breakdown walkout due to hot electron...
New failure mechanisms induced by hot-electrons in AlGaAs/InGaAs pseudomorphic HEMT's have been iden...
New failure mechanisms induced by hot-electrons in AlGaAs/InGaAs pseudomorphic HEMTs have been ident...
The reliability of AIGaAs/InGaAs pseudomorphic HEMT's has been investigated by means of thermal and ...
Abstract--ln this work we report on hot-electron stress experiments performed on commercial AlGaAs/I...
In this work we report on hot-electron stress experiments performed on commercial AlGaAs/InGaAs/GaAs...
A new failure mechanism of AlGaAs/InGaAs pseudomorphic high electron mobility transistors has been o...
This paper describes experimental results which demonstrate the existence of reliability problems du...
We present in this work the rapid and irreversible degradation of electrical characteristics induced...
We report on the degradation induced by hot electrons when AlGaAs/GaAs HEMTS are biased at high drai...
We present the first data on rapid degradation of electrical characteristics induced by hot electron...
Commercial pseudomorphic AlGaAs/InGaAs HEMTs designed for low noise operation have demonstrated weak...
Commercial pseudomorphic AlGaAs/InGaAs HEMTs designed for low noise operation have demonstrated weak...
The effects of hot-electron stress on electrical properties in AlGaAs/InGaAs pseudomorphic high elec...
In this work we show for the first time evidence of gate-drain breakdown walkout due to hot electron...
In this work we show for the first time evidence of gate-drain breakdown walkout due to hot electron...
New failure mechanisms induced by hot-electrons in AlGaAs/InGaAs pseudomorphic HEMT's have been iden...
New failure mechanisms induced by hot-electrons in AlGaAs/InGaAs pseudomorphic HEMTs have been ident...
The reliability of AIGaAs/InGaAs pseudomorphic HEMT's has been investigated by means of thermal and ...
Abstract--ln this work we report on hot-electron stress experiments performed on commercial AlGaAs/I...
In this work we report on hot-electron stress experiments performed on commercial AlGaAs/InGaAs/GaAs...
A new failure mechanism of AlGaAs/InGaAs pseudomorphic high electron mobility transistors has been o...
This paper describes experimental results which demonstrate the existence of reliability problems du...
We present in this work the rapid and irreversible degradation of electrical characteristics induced...
We report on the degradation induced by hot electrons when AlGaAs/GaAs HEMTS are biased at high drai...
We present the first data on rapid degradation of electrical characteristics induced by hot electron...
Commercial pseudomorphic AlGaAs/InGaAs HEMTs designed for low noise operation have demonstrated weak...
Commercial pseudomorphic AlGaAs/InGaAs HEMTs designed for low noise operation have demonstrated weak...
The effects of hot-electron stress on electrical properties in AlGaAs/InGaAs pseudomorphic high elec...
In this work we show for the first time evidence of gate-drain breakdown walkout due to hot electron...
In this work we show for the first time evidence of gate-drain breakdown walkout due to hot electron...