DOIAbstract
Some experimental results obtained at 300 K and 77 are presented regardind the silicon crystal doped with boron
Some experimental results obtained at 300 K and 77 are presented regardind the silicon crystal doped with boron
In this work results are presented regarding measurements on silicon diaphragms with piezoresitive d...
A wide variety of apparently contradictory piezoresistance (PZR) behaviors have been reported in p-t...
This thesis describes an investigation of the piezojunction effect in silicon. The aim of this inves...
Some experimental results obtained at 300 K and 77 are presented regardind the silicon crystal doped...
This note are presented some experimental results on piezoresistive properties of p-type-boron doped...
Results of the studies of the low-temperature piezoresistance for p-type silicon microcrystals doped...
A full investigation into the piezoresistive effect in polycrystalline silicon is described. A theor...
A new theoretical model for piezoresistance in both n- and p-type polycrystalline silicon is describ...
The piezoresistive response of n- and p-type hydrogenated nanocrystalline silicon thin films, deposi...
International audienceThe room-temperature longitudinal piezoresistance of n-type and p-type crystal...
This research investigates complex studies of electrical conductivity and magnetoresistance of both ...
AbstractAbsolute piezoresistive pressure sensors often use direct wafer bonding of SOI with the etch...
The piezo-resistance of 100 nm-thick, [110] oriented, p-type, mono-crystalline Si beams has been inv...
This thesis describes an investigation of the piezojunction effect in silicon. The aim of this inves...
The piezoresistivity coefficients in p- and n- channel MOS transitors manufactured on silicon wafers...
In this work results are presented regarding measurements on silicon diaphragms with piezoresitive d...
A wide variety of apparently contradictory piezoresistance (PZR) behaviors have been reported in p-t...
This thesis describes an investigation of the piezojunction effect in silicon. The aim of this inves...
Some experimental results obtained at 300 K and 77 are presented regardind the silicon crystal doped...
This note are presented some experimental results on piezoresistive properties of p-type-boron doped...
Results of the studies of the low-temperature piezoresistance for p-type silicon microcrystals doped...
A full investigation into the piezoresistive effect in polycrystalline silicon is described. A theor...
A new theoretical model for piezoresistance in both n- and p-type polycrystalline silicon is describ...
The piezoresistive response of n- and p-type hydrogenated nanocrystalline silicon thin films, deposi...
International audienceThe room-temperature longitudinal piezoresistance of n-type and p-type crystal...
This research investigates complex studies of electrical conductivity and magnetoresistance of both ...
AbstractAbsolute piezoresistive pressure sensors often use direct wafer bonding of SOI with the etch...
The piezo-resistance of 100 nm-thick, [110] oriented, p-type, mono-crystalline Si beams has been inv...
This thesis describes an investigation of the piezojunction effect in silicon. The aim of this inves...
The piezoresistivity coefficients in p- and n- channel MOS transitors manufactured on silicon wafers...
In this work results are presented regarding measurements on silicon diaphragms with piezoresitive d...
A wide variety of apparently contradictory piezoresistance (PZR) behaviors have been reported in p-t...
This thesis describes an investigation of the piezojunction effect in silicon. The aim of this inves...
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