Doping induced stable room temperature dual emission from gadolinium doped vacancy ordered double halide perovskite, Gd:Cs2SnCl6

International audienceThe recent advancement in bandgap engineering through controlled doping has widen the prospectof vacancy ordered double halide perovskites (VO DHPs) by conferring them with designableoptoelectronic properties. Here, we report synthesis of Gd doped Cs2SnCl6 via a simplesolvothermal method. Gd3+ ions doping lowers the band gap from 3.8 eV to 2.8 eV and facilitatesstable room temperature dual PL emission centered at 440 nm and 610 nm. The macroscopicemission process is well supported by the confocal PL emission studies on isolated crystallites.Both the pristine (Cs2SnCl6) and Gd:Cs2SnCl6 exhibit crystalline cubic structure with Fm3m spacegroup. Rietveld refinement correlates well with the cubic phase and the analysis of (220) XRDpeak validates the existence of a secondary crystalline phase. SEM studies confirm the anisotropicgrowth, forming large micron sized octahedral structures of pristine (> 20 μm) and Gd:Cs2SnCl6(< 5 μm). This study enhances the experimental understanding of hitherto unknown dual PLemission properties of Gd:Cs2SnCl6 having implication in quantum photonics leaving a scope fordetail theoretical study on the origin of the electronic transitions