The nature of surface states in cleaved surfaces of II-VI compounds with zincblende structure is studied. The tight-binding method is used to calcualete the electronic structure of a layer od twelvw (110) planes. The results show various surface bands both in the gap and in empty lenses od the projected bulk band structure. The nature of these states is discussed and a comparison with the available experiments is presented. The results support the model of ionic surface states previously proposed for these surfaces
In a previous work we have discussed the valence band electronic structure of a (001) oriented surf...
The electronic structure of the (110) surface of zinc-blende crystals is studied in a simple tight-b...
We present calculations of the electronic structure of the relaxed (110) face of all the Ga contain...
The nature of surface states in cleaved surfaces of II-VI compounds with zincblende structure is stu...
The role of self-consistency and of the atomic distortions in determining the electronic structure o...
Contains research objectives and summary of research on one research project.Joint Services Electron...
The electronic structure of the (110) face of GaAs, GaP and InSb is investigated using a realistic t...
We present a theoretical investigation of the effect of surface relaxation on the electronic structu...
We present a theroetical investigation of the effects of surface relaxation on the electronic struct...
The main aim of this thesis is to study and understand the surface electronic structure of compound ...
The electronic structure of the Zn(0001) surface is analyzed through a realistic slab calculation wi...
The tight-binding method for calculating the electronic structure of a slab of regulary stacked atom...
We studied the electronic band structure and corresponding local density of states of low-index fcc ...
Angle-resolved photoemission and inverse photoemission spectroscopy have been applied to investigate...
We have studied the dependence of the surface states upon relaxation in GaP (110) surface. Calculati...
In a previous work we have discussed the valence band electronic structure of a (001) oriented surf...
The electronic structure of the (110) surface of zinc-blende crystals is studied in a simple tight-b...
We present calculations of the electronic structure of the relaxed (110) face of all the Ga contain...
The nature of surface states in cleaved surfaces of II-VI compounds with zincblende structure is stu...
The role of self-consistency and of the atomic distortions in determining the electronic structure o...
Contains research objectives and summary of research on one research project.Joint Services Electron...
The electronic structure of the (110) face of GaAs, GaP and InSb is investigated using a realistic t...
We present a theoretical investigation of the effect of surface relaxation on the electronic structu...
We present a theroetical investigation of the effects of surface relaxation on the electronic struct...
The main aim of this thesis is to study and understand the surface electronic structure of compound ...
The electronic structure of the Zn(0001) surface is analyzed through a realistic slab calculation wi...
The tight-binding method for calculating the electronic structure of a slab of regulary stacked atom...
We studied the electronic band structure and corresponding local density of states of low-index fcc ...
Angle-resolved photoemission and inverse photoemission spectroscopy have been applied to investigate...
We have studied the dependence of the surface states upon relaxation in GaP (110) surface. Calculati...
In a previous work we have discussed the valence band electronic structure of a (001) oriented surf...
The electronic structure of the (110) surface of zinc-blende crystals is studied in a simple tight-b...
We present calculations of the electronic structure of the relaxed (110) face of all the Ga contain...