The recent application to the semiconductor surfaces of the powerful ab-initio molecular dynamics (Car-Parrinello) method [R. Car,M. Parrinello,Phys. Rev. Lett. 55,2471 (1985)] will be reviewed. The essential features of the method will be addressed first,then we will review a number of recent sudies on the properties of the clean and adsorbate covered surfaces of Si,Ge and GaAs,obtained through Car-Parrinello simulations. Finally an original application of the ab-initio molecular dynamics for the clean and hydrogenated GaAs(110) surfaces is presented
We have performed molecular dynamics simulations of the adsorption and diffusion of Ga, In and As ad...
The recent development of computational methods using very large plane-wave basis sets, together wit...
Starting from simple models, the description is extended to the surfaces delimiting 3D crystals, wit...
The recent application to the semiconductor surfaces of the powerful ab-initio molecular dynamics (C...
We present an overview of basic adsorption and dynamical processes at semiconductor surfaces, studie...
The atomic geometry and the electronic structure of GaAs(110) and Si(111) with full coverage of chem...
In this thesis I report results of ab initio density functional calculations of equilibrium atomic g...
We present results of finite-temperature Car-Parrinello molecular dynamics simulations of the atomic...
Abstract: We present results of finite-temperature Car-Parrinello molecular dynamics simulations of ...
Abstract. Many structural, physical, and chemical properties of surfaces and interfaces can now be d...
Many structural, physical, and chemical properties of surfaces and interfaces can now be described b...
Using ab initio quantum chemical methods (generalized valence bond), we examine (i) the electronic s...
We present a bond-charge-model slab calculation for the surface dynamics of GaAs(110), which represe...
Contains reports on one research project.Joint Services Electronics Program (Contract DAAB07-75-C-13...
The deposition of Si on the GaAs(001)-c(4×4) reconstructed surface is studied with the aid of ab ini...
We have performed molecular dynamics simulations of the adsorption and diffusion of Ga, In and As ad...
The recent development of computational methods using very large plane-wave basis sets, together wit...
Starting from simple models, the description is extended to the surfaces delimiting 3D crystals, wit...
The recent application to the semiconductor surfaces of the powerful ab-initio molecular dynamics (C...
We present an overview of basic adsorption and dynamical processes at semiconductor surfaces, studie...
The atomic geometry and the electronic structure of GaAs(110) and Si(111) with full coverage of chem...
In this thesis I report results of ab initio density functional calculations of equilibrium atomic g...
We present results of finite-temperature Car-Parrinello molecular dynamics simulations of the atomic...
Abstract: We present results of finite-temperature Car-Parrinello molecular dynamics simulations of ...
Abstract. Many structural, physical, and chemical properties of surfaces and interfaces can now be d...
Many structural, physical, and chemical properties of surfaces and interfaces can now be described b...
Using ab initio quantum chemical methods (generalized valence bond), we examine (i) the electronic s...
We present a bond-charge-model slab calculation for the surface dynamics of GaAs(110), which represe...
Contains reports on one research project.Joint Services Electronics Program (Contract DAAB07-75-C-13...
The deposition of Si on the GaAs(001)-c(4×4) reconstructed surface is studied with the aid of ab ini...
We have performed molecular dynamics simulations of the adsorption and diffusion of Ga, In and As ad...
The recent development of computational methods using very large plane-wave basis sets, together wit...
Starting from simple models, the description is extended to the surfaces delimiting 3D crystals, wit...