We present a synchrotron radiation investigation on the electronic properties of the GaAs(110) surface covered with alkali metals (Cs, K). As and Ga core level spectra for the clean surface are compared with those obtained after metal deposition. Satellites structures at about 4 and 6 eV from the main peak are found, which can be interpreted in terms of the excitation of overlayer plasma modes. We also study comparatively the effect of K and Cs on the oxidation of the GaAs surface
The Ag/GaAs(110) system, which serves as a model system for unreactive metal-semiconductor interface...
We present a synchrotron-radiation photoemission investigation of hydrogen chemisorption on GaAs(110...
This study investigates the fundamental physical processes involved in the formation of an ultra-thi...
We present a synchrotron radiation investigation on the electronic properties of the GaAs(110) surfa...
We have used the technique of angle-resolved photoemission with a synchrotron radiation source to pr...
The electronic properties of alkali metals (Cs and Na) deposited on the gallium-rich GaAs(001 surfac...
We present a study of Cs adatom deposition on an antimony-precovered GaAs(110) surface by means of u...
Using an approximate solution of the Hubbard-model Hamiltonian, we are able to establish that the Cs...
Evaporation of a Cs overlayer in the submonolayer and monolayer regime on a cleaved GaAs(110) surfac...
We present a high-resolution electron-energy-loss analysis of the interface system Cs/GaAs(110) grow...
A detailed study at room temperature of the interfaces between thin alkali films and cleaved or sput...
The adsorption of K on the n-GaAs(I 0 0) surface was investigated by X-ray photoelectron spectroscop...
In order to investigate the dramatic enhancement of the oxidation rate of semiconductor materials, p...
We discuss briefly data obtained for adsorbed alkali metal monolayers with three different technique...
Cesium adsorption on GaAs(110) has been studied by angle-resolved photoemission spectroscopy at room...
The Ag/GaAs(110) system, which serves as a model system for unreactive metal-semiconductor interface...
We present a synchrotron-radiation photoemission investigation of hydrogen chemisorption on GaAs(110...
This study investigates the fundamental physical processes involved in the formation of an ultra-thi...
We present a synchrotron radiation investigation on the electronic properties of the GaAs(110) surfa...
We have used the technique of angle-resolved photoemission with a synchrotron radiation source to pr...
The electronic properties of alkali metals (Cs and Na) deposited on the gallium-rich GaAs(001 surfac...
We present a study of Cs adatom deposition on an antimony-precovered GaAs(110) surface by means of u...
Using an approximate solution of the Hubbard-model Hamiltonian, we are able to establish that the Cs...
Evaporation of a Cs overlayer in the submonolayer and monolayer regime on a cleaved GaAs(110) surfac...
We present a high-resolution electron-energy-loss analysis of the interface system Cs/GaAs(110) grow...
A detailed study at room temperature of the interfaces between thin alkali films and cleaved or sput...
The adsorption of K on the n-GaAs(I 0 0) surface was investigated by X-ray photoelectron spectroscop...
In order to investigate the dramatic enhancement of the oxidation rate of semiconductor materials, p...
We discuss briefly data obtained for adsorbed alkali metal monolayers with three different technique...
Cesium adsorption on GaAs(110) has been studied by angle-resolved photoemission spectroscopy at room...
The Ag/GaAs(110) system, which serves as a model system for unreactive metal-semiconductor interface...
We present a synchrotron-radiation photoemission investigation of hydrogen chemisorption on GaAs(110...
This study investigates the fundamental physical processes involved in the formation of an ultra-thi...