NROM \u2013 a new Non Volatile Memory Technology: from Device to Products

NROM\u2122 \u2014 a new NVM technology has recently been introduced, enabling three major improvements relative to the floating gate technology: one technology for all NVM products (Flash, EEPROM, ROM and Embedded), higher density (2.5F2 per bit in flash) and simple process with reduced number of masks without any exotic materials. The NROM\u2122 cell is based on localized charge trapping above the junction edge, enabling physically separated two bits per cell. Performance of new NVM NROM\u2122 based products show endurance up to 100 K with retention of 10 years at 150\ub0C