A photoemission study of Yb/GaP(110) interface at early stage of formation is presented, showing strong reactivity and interdiffusion
The present paper is devoted to the application of metastable deexcitation spectroscopy (MDS) for st...
Yb chemisorption at monolayer coverages onto Si substrates is the precursor stage of Yb/Si interface...
A comparison between the formation mechanism of Ge-GaAs(110) and Ge-Si(111) is presented. The locali...
A photoemission study of Yb/GaP(110) interface at early stage of formation is presented, showing st...
The GaP(110)/Yb interface was studied with use of synchrotron radiation to excite the Ga 3d and the ...
The Yb-GaP(110) interface formation was studied by EELS (electron energy loss spectroscopy) and AES ...
Surface LIII absorption and UV photoemission experiments are reported for the characterization of th...
The formation of the Yb-Si(111) interface has been monitored by photoemission at a synchrotron beam ...
We present the results of a photoelectron spectroscopy study of the K/GaP(110) interface grown at T ...
The results of a photoelectron spectroscopy study of the K/GaP(110) interface grown at T=120 K are p...
Nous avons utilisé des mesures de seuil LIII de surface et de photoémission UV pour étudier l'état d...
We present the results of a photoelectron spectroscopy study of the K/GaP(110) interface grown at T ...
The changes in the bond between Yb and Si from bulk to interfacehave been investigated by photoem...
Metastable deexcitation spectroscopy (MDS) was applied to the study of the growth of the Yb/GaAs(110...
The Pt/GaP(110) interface has been studied by core and valence level photoemission using synchrotron...
The present paper is devoted to the application of metastable deexcitation spectroscopy (MDS) for st...
Yb chemisorption at monolayer coverages onto Si substrates is the precursor stage of Yb/Si interface...
A comparison between the formation mechanism of Ge-GaAs(110) and Ge-Si(111) is presented. The locali...
A photoemission study of Yb/GaP(110) interface at early stage of formation is presented, showing st...
The GaP(110)/Yb interface was studied with use of synchrotron radiation to excite the Ga 3d and the ...
The Yb-GaP(110) interface formation was studied by EELS (electron energy loss spectroscopy) and AES ...
Surface LIII absorption and UV photoemission experiments are reported for the characterization of th...
The formation of the Yb-Si(111) interface has been monitored by photoemission at a synchrotron beam ...
We present the results of a photoelectron spectroscopy study of the K/GaP(110) interface grown at T ...
The results of a photoelectron spectroscopy study of the K/GaP(110) interface grown at T=120 K are p...
Nous avons utilisé des mesures de seuil LIII de surface et de photoémission UV pour étudier l'état d...
We present the results of a photoelectron spectroscopy study of the K/GaP(110) interface grown at T ...
The changes in the bond between Yb and Si from bulk to interfacehave been investigated by photoem...
Metastable deexcitation spectroscopy (MDS) was applied to the study of the growth of the Yb/GaAs(110...
The Pt/GaP(110) interface has been studied by core and valence level photoemission using synchrotron...
The present paper is devoted to the application of metastable deexcitation spectroscopy (MDS) for st...
Yb chemisorption at monolayer coverages onto Si substrates is the precursor stage of Yb/Si interface...
A comparison between the formation mechanism of Ge-GaAs(110) and Ge-Si(111) is presented. The locali...
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