Design, Simulation and electromechanical Modeling of RF MEMS Capacitive Switches

The purpose of this paper is to design and characterize electrostatically actuated RF MEMS capacitive shunt switches. The design is mainly aimed at reducing actuation voltage, which is an important switch parameter. In this paper, there are many variations of support beam used to minimize spring constant of RF MEMS devices such as fixed-fixed beam, fixed-fixed flexure beam and serpentine flexures. The actuation voltage so achieved is in the range of 2-4 V for these designs. The analysis results are presented by varying geometry of the switch. DOI: 10.17762/ijritcc2321-8169.15068