Structural and photovoltaic properties of a-Si (SNc)/c-Si heterojunction fabricated by EBPVD technique

Doga Nanobiotech Inc.;Mega Technology Services Inc.3rd International Advances in Applied Physics and Materials Science Congress, APMAS 2013 -- 24 April 2013 through 28 April 2013 -- -- 111830In last two decades sculptured thin films are very attractive for researches. Some properties of these thin films, like high porosity correspondingly high large surface area, controlled morphology; bring into prominence on them. Sculptured thin films have wide application areas as electronics, optics, mechanics, magnetic and chemistry. Slanted nano-columnar (SnC) thin films are a type of sculptured thin films. In this investigation SnC thin films were growth on n-type crystalline Si(100) and p-type crystalline Si(111) via ultra-high vacuum electron beam evaporation technique. The structural and morphological properties of the amorphous silicon thin films were investigated by XRD, Raman and FE-SEM analysis. According to the XRD and Raman analysis the structure of thin film was amorphous and FE-SEM analysis indicated slanted nano-columns were formed smoothly. Slanted nano-columns a-Si/c-Si heterojunction were prepared as using a photovoltaic device. In this regard we were researched photovoltaic properties of these heterojunction with current-voltage characterization under dark and illumination conditions. Electrical parameters were determined from the current-voltage characteristic in the dark conditions zero-bias barrier height ? B0 =0.83-1.00eV; diode ideality factor ?=11.71-10.73; series resistance R s =260-31.1 k? and shunt resistance R sh =25.71-63.5 M? SnC a-Si/n-Si and SnC a-Si/p-Si heterojunctions shows a pretty good photovoltaic behavior about 10 3 - 10 4 times. The obtained photovoltaic parameters are such as short circuit current density J sc 83-40 mA/m 2 , open circuit voltage V oc 900-831 mV. © 2013 AIP Publishing LLC