The surface composition profiles of self-assembled InAs/GaAs quantum rings (QR) are studied both experimentally and theoretically. By using X-ray Photoemission Electron Microscopy (XPEEM) we obtain a 2D composition mapping of unburied rings, which can be directly related to the QR topography measured by Atomic Force Microscopy (AFM). Top-surface composition mapping allows us to obtain information on structures which cannot be directly accessed with cross-sectional studies since overgrowing the QRs with a thick GaAs film alters both their morphology and composition. The 2D surface maps reveal a non-uniform distribution across the rings with an In richer InGaAs alloy in the central hole regions. Elastic energy calculations via a Valence Force...
In this work, we analyse by Atom Probe Tomography (APT) the composition distribution of InAs/GaAs st...
The properties of self-assembled InAs∕GaAs quantum rings are investigated by conductive atomic force...
The three-dimensional morphology of In(Ga)As nanostructures embedded in a GaAs matrix is investigate...
The surface composition profiles of self-assembled InAs/GaAs quantum rings (QR) are studied both exp...
The composition profile of self-assembled InAs/GaAs quantum rings is investigated both experimentall...
We present an atomic-scale analysis of the indium distribution of self-assembled In(Ga)As quantum ri...
4 páginas, 4 figuras.-- Proceedings of the 14th Conference, April 11–14, 2005, Oxford, UK.-- A. G. C...
The authors present an at.-scale anal. of the In distribution of self-assembled (In,Ga)As quantum ri...
[[abstract]]© 2007 Elsevier - The influence of InAs coverage on the formation of self-assembled quan...
An adequate modeling of the self-organized quantum rings is possible only on the basis of the modern...
An adequate modeling of the self-organized quantum rings is possible only on the basis of the modern...
uantu tum o be various materials have been fabricated, especially for III– morphological change into...
Recent advances in the epitaxial growth of low-dimensional semiconductor systems with techniques suc...
In this work, we analyse by Atom Probe Tomography (APT) the composition distribution of InAs/GaAs st...
The properties of self-assembled InAs∕GaAs quantum rings are investigated by conductive atomic force...
The three-dimensional morphology of In(Ga)As nanostructures embedded in a GaAs matrix is investigate...
The surface composition profiles of self-assembled InAs/GaAs quantum rings (QR) are studied both exp...
The composition profile of self-assembled InAs/GaAs quantum rings is investigated both experimentall...
We present an atomic-scale analysis of the indium distribution of self-assembled In(Ga)As quantum ri...
4 páginas, 4 figuras.-- Proceedings of the 14th Conference, April 11–14, 2005, Oxford, UK.-- A. G. C...
The authors present an at.-scale anal. of the In distribution of self-assembled (In,Ga)As quantum ri...
[[abstract]]© 2007 Elsevier - The influence of InAs coverage on the formation of self-assembled quan...
An adequate modeling of the self-organized quantum rings is possible only on the basis of the modern...
An adequate modeling of the self-organized quantum rings is possible only on the basis of the modern...
uantu tum o be various materials have been fabricated, especially for III– morphological change into...
Recent advances in the epitaxial growth of low-dimensional semiconductor systems with techniques suc...
In this work, we analyse by Atom Probe Tomography (APT) the composition distribution of InAs/GaAs st...
The properties of self-assembled InAs∕GaAs quantum rings are investigated by conductive atomic force...
The three-dimensional morphology of In(Ga)As nanostructures embedded in a GaAs matrix is investigate...