On Carbon doping to improve GeTe-based Phase-Change Memory data retention at high temperature
- G., Betti Beneventi
- E., Gourvestzk
- A., Fantini
- L., Perniola
- V., Sousa
- S., Maitrejean
- J. C., Bastien
- A., Bastard
- A., Fargeix
- B., Hyot
- C., Jahan
- J. F., Nodin
- A., Persico
- D., Blachier
- A., Toffoli
- S., Loubriat
- A., Roule
- S., Lhostis
- H., Feldis
- G., Reimbold
- T., Billon
- B., De Salvo
- Larcher, Luca
- Pavan, Paolo
- D., Bensahel
- P., Mazoyer
- R., Annunziata
- F., Boulanger
DOIAbstract
This paper investigates material and electrical propertiesof a new chalcogenide alloy for Phase-Change Memories(PCM): Carbon-doped GeTe (named GeTeC). First, severalphysico-chemical, optical and electrical analyses have beenperformed on full-sheet chalcogenide depositions in order tounderstand the intrinsic GeTeC phase-change behavior, andto characterize structure and composition of amorphous andcrystalline states. Then, GeTeC with two different Carbon doping(4% and 10%) has been integrated in pillar-type analytical PCMcells. Physico-chemical and electrical data indicate that GeTeC ischaracterized by a much more stable amorphous phase comparedto undoped GeTe. Thus, GeTeC offers a slower programmingspeed versus GeTe, but an improved data ret...
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