The purpose of this work is to investigate the physics of electron/hole trapping/detrapping mechanisms in Al2O3. Combining I-V and C-V measurements with a physical model we derive the energy levels of electron/hole traps and the location of electron/hole charge. The influence of electron/hole alumina traps on TANOS operations and reliability is investigated
The characteristics of intrinsic electron and hole trapping in crystalline and amorphous Al2O3 have ...
We investigate and quantify the role played by electrons and holes during the erase operation of TAN...
In porous and barrier-type anodic alumina films, the stored charge has electronic nature and it play...
The purpose of this work is to investigate the physics of electron/hole trapping/detrapping mechanis...
We investigate electron/hole trapping phenomena in alumina blocking oxide and their impact on the pr...
In this work, we use atomistic simulation, consolidated by a detailed Al2O3 physico-chemical materia...
In this work we investigate the correlation between hydrogen content and leakage current through the...
In this work, we use atomistic simulation, consolidated by a detailed Al2O3 physico-chemical materia...
In this paper, we present our results on the distribution and generation of traps in a SiO2/Al2O3 tr...
The influence of the temperature on Metal Gate/Al2O3/n-InGaAs stacks has been studied by means of ca...
Charge trap flash memories with Al2O3/High-k/Al2O3 multilayer have been considered to reduce leakage...
Abstract—SiO2/high-κ dielectric stacks will soon replace the conventional SiO2-based dielectric stac...
In this work we combine charge-pumping measurements with positive constant voltage stress to investi...
In this article, the charge trapping phenomena in Al2O3 thin films grown by atomic layer deposition ...
Abstract—The erase characteristics and mechanism of metal– Al2O3–nitride–oxide–silicon (MANOS) devic...
The characteristics of intrinsic electron and hole trapping in crystalline and amorphous Al2O3 have ...
We investigate and quantify the role played by electrons and holes during the erase operation of TAN...
In porous and barrier-type anodic alumina films, the stored charge has electronic nature and it play...
The purpose of this work is to investigate the physics of electron/hole trapping/detrapping mechanis...
We investigate electron/hole trapping phenomena in alumina blocking oxide and their impact on the pr...
In this work, we use atomistic simulation, consolidated by a detailed Al2O3 physico-chemical materia...
In this work we investigate the correlation between hydrogen content and leakage current through the...
In this work, we use atomistic simulation, consolidated by a detailed Al2O3 physico-chemical materia...
In this paper, we present our results on the distribution and generation of traps in a SiO2/Al2O3 tr...
The influence of the temperature on Metal Gate/Al2O3/n-InGaAs stacks has been studied by means of ca...
Charge trap flash memories with Al2O3/High-k/Al2O3 multilayer have been considered to reduce leakage...
Abstract—SiO2/high-κ dielectric stacks will soon replace the conventional SiO2-based dielectric stac...
In this work we combine charge-pumping measurements with positive constant voltage stress to investi...
In this article, the charge trapping phenomena in Al2O3 thin films grown by atomic layer deposition ...
Abstract—The erase characteristics and mechanism of metal– Al2O3–nitride–oxide–silicon (MANOS) devic...
The characteristics of intrinsic electron and hole trapping in crystalline and amorphous Al2O3 have ...
We investigate and quantify the role played by electrons and holes during the erase operation of TAN...
In porous and barrier-type anodic alumina films, the stored charge has electronic nature and it play...