The differences between the energy positions of surface bands in quasi-particle and local-density approximations are calculated taking into account the different screening properties of a semiconductor and of an electron gas of the same average density. Gap corrections of the order of 1.5 eV are computed for GaP(110) and GaAs(110) surfaces, in good agreement with experiment
An energy gap between the valence and the conduction band is the defining property of a semiconducto...
Contains reports on one research project.Joint Services Electronics Program (Contract DAAB07-75-C-13...
We have applied the Green-function method in the GW approximation to calculate quasiparticle energie...
The differences between the energy positions of surface bands in quasi-particle and local-density ap...
We present a method for the efficient calculation of the electronic structure of semiconductors with...
We present a method for the efficient calculation of the electronic structure of semiconductors with...
We present a method for the efficient calculation of the electronic structure of semiconductors with...
We present a method for the efficient calculation of the electronic structure of semiconductors with...
We present a method for the efficient calculation of the electronic structure of semiconductors with...
We present a method for the efficient calculation of the electronic structure of semiconductors with...
We present a quantitative parameter-free method for calculating defect states and charge-transition ...
We present a quantitative parameter-free method for calculating defect states and charge-transition ...
We propose a new method for calculating optical defect levels and thermodynamic charge-transition le...
An energy gap between the valence and the conduction band is the defining property of a semiconducto...
The investigation of the electronic properties of semiconductor surfaces using scanning tunneling sp...
An energy gap between the valence and the conduction band is the defining property of a semiconducto...
Contains reports on one research project.Joint Services Electronics Program (Contract DAAB07-75-C-13...
We have applied the Green-function method in the GW approximation to calculate quasiparticle energie...
The differences between the energy positions of surface bands in quasi-particle and local-density ap...
We present a method for the efficient calculation of the electronic structure of semiconductors with...
We present a method for the efficient calculation of the electronic structure of semiconductors with...
We present a method for the efficient calculation of the electronic structure of semiconductors with...
We present a method for the efficient calculation of the electronic structure of semiconductors with...
We present a method for the efficient calculation of the electronic structure of semiconductors with...
We present a method for the efficient calculation of the electronic structure of semiconductors with...
We present a quantitative parameter-free method for calculating defect states and charge-transition ...
We present a quantitative parameter-free method for calculating defect states and charge-transition ...
We propose a new method for calculating optical defect levels and thermodynamic charge-transition le...
An energy gap between the valence and the conduction band is the defining property of a semiconducto...
The investigation of the electronic properties of semiconductor surfaces using scanning tunneling sp...
An energy gap between the valence and the conduction band is the defining property of a semiconducto...
Contains reports on one research project.Joint Services Electronics Program (Contract DAAB07-75-C-13...
We have applied the Green-function method in the GW approximation to calculate quasiparticle energie...
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