Different modification techniques, namely, preheating, controlling the cooling rate and modification with tetra(-4-pyridyl)porphyrinatomanganese(III) have been used to enhance photoelectrochemical characteristics of n-GaAs electrodes in light-to-electricity conversions..
I t is generally recognized that the key obstacle to the development of electro-chemical solar cells...
The GaAs surface has been modified to reduce the density of interface states when a Schottky barrier...
The lifetime of GaAs photocathodes can be greatly improved by introducing Li in the Cs+NF{sub 3} act...
The effect of annealing of the n-GaAs semiconductor on its characteristics in photoelectrochemical (...
The formation of a porous layer on the surface of gallium arsenide anode, n-GaAs, increases photogen...
Photoanodes composed of n-GaAs in contact with electrolytes exhibit distinctive hotoelcotrcohemical ...
abstract: We report a direct one-step method to chemically graft metalloporphyrins to a visible-ligh...
The use of molten-salt electrolytes in photoelectrochemical (PEC) de-vices is demonstrated by the n-...
The electrochemical nd photoelectrochemical behavior of surfaces of (100) n-GaAs and p-GaAs were stu...
A set of low n-doped GaAsl_yP ~ epitaxial layers, with the composition y in the range 0-< y-< ...
Current density vs potential, open-circuit voltage vs temperature, and differential capacitance vs p...
Metal-semiconductor junctions are important elements in semiconductor devices. An ohmic contact can ...
The article describes the results of the research on thermal stability of electrical parameters of n...
The paper deals with the singlet and triplet state properties of several organic dyes: magnesium and...
Although semiconducting gallium arsenide (GaAs) possesses an ideal band gap for efficient solar-driv...
I t is generally recognized that the key obstacle to the development of electro-chemical solar cells...
The GaAs surface has been modified to reduce the density of interface states when a Schottky barrier...
The lifetime of GaAs photocathodes can be greatly improved by introducing Li in the Cs+NF{sub 3} act...
The effect of annealing of the n-GaAs semiconductor on its characteristics in photoelectrochemical (...
The formation of a porous layer on the surface of gallium arsenide anode, n-GaAs, increases photogen...
Photoanodes composed of n-GaAs in contact with electrolytes exhibit distinctive hotoelcotrcohemical ...
abstract: We report a direct one-step method to chemically graft metalloporphyrins to a visible-ligh...
The use of molten-salt electrolytes in photoelectrochemical (PEC) de-vices is demonstrated by the n-...
The electrochemical nd photoelectrochemical behavior of surfaces of (100) n-GaAs and p-GaAs were stu...
A set of low n-doped GaAsl_yP ~ epitaxial layers, with the composition y in the range 0-< y-< ...
Current density vs potential, open-circuit voltage vs temperature, and differential capacitance vs p...
Metal-semiconductor junctions are important elements in semiconductor devices. An ohmic contact can ...
The article describes the results of the research on thermal stability of electrical parameters of n...
The paper deals with the singlet and triplet state properties of several organic dyes: magnesium and...
Although semiconducting gallium arsenide (GaAs) possesses an ideal band gap for efficient solar-driv...
I t is generally recognized that the key obstacle to the development of electro-chemical solar cells...
The GaAs surface has been modified to reduce the density of interface states when a Schottky barrier...
The lifetime of GaAs photocathodes can be greatly improved by introducing Li in the Cs+NF{sub 3} act...