Add to ORKGWe present a compact experimental technique for the extraction of all parasitic series resistances of bipolar transistors, which require only few DC measurements and no special device structure. The method is based upon the fact that, due to impact ionization within the base-collector space-charge region, at a certain collector-base voltage the base current and therefore the voltage drop on the base resistance are reduced to zero
A comparison between two recently proposed DC methods for the extraction of base parasitic resistanc...
The commonly used methods to measure series resistances in bipolar transistors including the open-co...
[[abstract]]In this work, bipolar junction transistors with two separate base terminals and the dc m...
We present a compact experimental technique for the extraction of all parasitic series resistances o...
A new method for the evaluation of the dc base parasitic resistance of bipolar transistors is descri...
A new method for the evaluation of the dc base parasitic resistance, R(B), of bipolar transistors is...
A new technique for extracting the collector series resistance of bipolar transistors is presented. ...
A new technique for extracting the collector series resistance of bipolar transistors is presented. ...
A new DC technique for extracting parasitic base resistance, RB, of advanced bipolar transistors is ...
A new dc technique for extracting parasitic base resistance, RB, of advanced bipolar transistors is ...
In this paper we describe a set of measurements representing a complete characterization of impact-i...
In this paper we describe a set of measurements representing a complete characterization of impact-i...
In this thesis, techniques are presented for determining the model parameter values required by comp...
A comparison between two recently proposed DC methods for the extraction of base parasitic resistanc...
This paper presents an improved variant of a dc method to experimentally evaluate the base resistanc...
A comparison between two recently proposed DC methods for the extraction of base parasitic resistanc...
The commonly used methods to measure series resistances in bipolar transistors including the open-co...
[[abstract]]In this work, bipolar junction transistors with two separate base terminals and the dc m...
We present a compact experimental technique for the extraction of all parasitic series resistances o...
A new method for the evaluation of the dc base parasitic resistance of bipolar transistors is descri...
A new method for the evaluation of the dc base parasitic resistance, R(B), of bipolar transistors is...
A new technique for extracting the collector series resistance of bipolar transistors is presented. ...
A new technique for extracting the collector series resistance of bipolar transistors is presented. ...
A new DC technique for extracting parasitic base resistance, RB, of advanced bipolar transistors is ...
A new dc technique for extracting parasitic base resistance, RB, of advanced bipolar transistors is ...
In this paper we describe a set of measurements representing a complete characterization of impact-i...
In this paper we describe a set of measurements representing a complete characterization of impact-i...
In this thesis, techniques are presented for determining the model parameter values required by comp...
A comparison between two recently proposed DC methods for the extraction of base parasitic resistanc...
This paper presents an improved variant of a dc method to experimentally evaluate the base resistanc...
A comparison between two recently proposed DC methods for the extraction of base parasitic resistanc...
The commonly used methods to measure series resistances in bipolar transistors including the open-co...
[[abstract]]In this work, bipolar junction transistors with two separate base terminals and the dc m...