In this work, we presented a new technique to profile hole distribution in NROM devices. The evolution of the nitride charge in cycled cells was monitored. The key role played by holes in NROM retention degradation was identified. Electron injection far from the junction and VT drift in erased NROM cells are successfully explained
Abstract—The negative threshold voltage ( ) shift of a nitride storage flash memory cell in the eras...
International audienceAn in-depth investigation of NOR flash degradation occurring during Fowler-Nor...
We provide an experimental and theoretical investigation of the reliability properties of discrete-t...
In this work, we presented a new technique to profile hole distribution in NROM devices. The evoluti...
The NROM-cell concept has been introduced as a promising technology to replace Flash nonvolatile mem...
The NROM-cell concept has been introduced as a promising technology to replace Flash nonvolatile mem...
The NROM cell concept has been introduced as a promising technology to replace Flash non-volatile me...
NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling...
NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling...
NROM memory cells are proposed as promising nonvolatile memories. Even though these devices should ...
The purpose of this paper is to investigate the physical mechanism of NROM memory erase. Three condu...
Charge loss mechanisms of nanoscale charge trap non-volatile memory devices are carefully examined a...
NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling...
NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling...
An alternative solution to standard Flash memories is represented by nitride-trap memories as silico...
Abstract—The negative threshold voltage ( ) shift of a nitride storage flash memory cell in the eras...
International audienceAn in-depth investigation of NOR flash degradation occurring during Fowler-Nor...
We provide an experimental and theoretical investigation of the reliability properties of discrete-t...
In this work, we presented a new technique to profile hole distribution in NROM devices. The evoluti...
The NROM-cell concept has been introduced as a promising technology to replace Flash nonvolatile mem...
The NROM-cell concept has been introduced as a promising technology to replace Flash nonvolatile mem...
The NROM cell concept has been introduced as a promising technology to replace Flash non-volatile me...
NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling...
NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling...
NROM memory cells are proposed as promising nonvolatile memories. Even though these devices should ...
The purpose of this paper is to investigate the physical mechanism of NROM memory erase. Three condu...
Charge loss mechanisms of nanoscale charge trap non-volatile memory devices are carefully examined a...
NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling...
NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling...
An alternative solution to standard Flash memories is represented by nitride-trap memories as silico...
Abstract—The negative threshold voltage ( ) shift of a nitride storage flash memory cell in the eras...
International audienceAn in-depth investigation of NOR flash degradation occurring during Fowler-Nor...
We provide an experimental and theoretical investigation of the reliability properties of discrete-t...
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