Add to ORKGNROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling and endurance have risen due to the presence of both electrons and holes for the control of their relative position and spread in the charge trapping material. In this paper, we present a new characterization tool able to sense charge distribution features in different program/erase conditions that can be efficiently used for program/erase bias optimization and reliability predictions. This new tool exploits temperature effects on ID-VGS current measurement
Abstract — Memories are increasingly dominating Systems on Chip (SoC) designs and thus contribute a ...
Abstract—The temperature effect on the read current of a two-bit nitride-storage Flash memory cell i...
Increasing data-centric nature of compute has motivated the need for overcoming the von Neumann memo...
NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling...
NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling...
NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling...
NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling...
The NROM cell concept has been introduced as a promising technology to replace Flash non-volatile me...
NROM memory cells are proposed as promising nonvolatile memories. Even though these devices should ...
Non-Volatile Memory (NVM) devices store data in floating gates in binary form with electrical charge...
The NROM-cell concept has been introduced as a promising technology to replace Flash nonvolatile mem...
The aim of this paper is to achieve a correct description of programming charge distribution in NROM...
In this work, we presented a new technique to profile hole distribution in NROM devices. The evoluti...
The NROM-cell concept has been introduced as a promising technology to replace Flash nonvolatile mem...
Charge loss mechanisms of nanoscale charge trap non-volatile memory devices are carefully examined a...
Abstract — Memories are increasingly dominating Systems on Chip (SoC) designs and thus contribute a ...
Abstract—The temperature effect on the read current of a two-bit nitride-storage Flash memory cell i...
Increasing data-centric nature of compute has motivated the need for overcoming the von Neumann memo...
NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling...
NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling...
NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling...
NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling...
The NROM cell concept has been introduced as a promising technology to replace Flash non-volatile me...
NROM memory cells are proposed as promising nonvolatile memories. Even though these devices should ...
Non-Volatile Memory (NVM) devices store data in floating gates in binary form with electrical charge...
The NROM-cell concept has been introduced as a promising technology to replace Flash nonvolatile mem...
The aim of this paper is to achieve a correct description of programming charge distribution in NROM...
In this work, we presented a new technique to profile hole distribution in NROM devices. The evoluti...
The NROM-cell concept has been introduced as a promising technology to replace Flash nonvolatile mem...
Charge loss mechanisms of nanoscale charge trap non-volatile memory devices are carefully examined a...
Abstract — Memories are increasingly dominating Systems on Chip (SoC) designs and thus contribute a ...
Abstract—The temperature effect on the read current of a two-bit nitride-storage Flash memory cell i...
Increasing data-centric nature of compute has motivated the need for overcoming the von Neumann memo...