Add to ORKGHigh-electric-field degradation phenomena are studied in GaN-capped AlGaN-GaN HEMTs by comparing experimental results with numerical device simulations and assessing the suitability of different degradation scenarios to account for the observed electrical stress effects
In the present paper we review the most recent degradation modes and mechanisms recently observed in...
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
This paper reports on the experimental evidences of hot electrons induced degradations of AlGaN/GaN ...
High-electric-field degradation phenomena are studied in GaN-capped AlGaN-GaN HEMTs by comparing exp...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
Inadequate high-electric-field reliability is, at present, the major factor still limiting the large...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN/GaN HEMTs by comparin...
Thesis: S.M. in Electrical Engineering, Massachusetts Institute of Technology, Department of Electri...
In this letter, the effects of dc stress on GaN high-electron-mobility transistors' performance are ...
In this paper, we investigate the effects of dc stress on GaN high-electron mobility transistors (HE...
We present calculation of critical voltage for AlGaN/GaN high electron mobility transistors (HEMTs) ...
In the present paper we review the most recent degradation modes and mechanisms recently observed in...
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
This paper reports on the experimental evidences of hot electrons induced degradations of AlGaN/GaN ...
High-electric-field degradation phenomena are studied in GaN-capped AlGaN-GaN HEMTs by comparing exp...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
Inadequate high-electric-field reliability is, at present, the major factor still limiting the large...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN/GaN HEMTs by comparin...
Thesis: S.M. in Electrical Engineering, Massachusetts Institute of Technology, Department of Electri...
In this letter, the effects of dc stress on GaN high-electron-mobility transistors' performance are ...
In this paper, we investigate the effects of dc stress on GaN high-electron mobility transistors (HE...
We present calculation of critical voltage for AlGaN/GaN high electron mobility transistors (HEMTs) ...
In the present paper we review the most recent degradation modes and mechanisms recently observed in...
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
This paper reports on the experimental evidences of hot electrons induced degradations of AlGaN/GaN ...