Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs

Simulation of Drastic Lag Phenomena in GaAs-Based FETs for Large Voltage Swing

K. Horio
Y. Mitani
A. Wakabayashi
N. Kurosawa

January 2001

Turn-on characteristics of GaAs MESFETs and HEMTs are simulated when the gate voltage is changed abr...

A Drain-Lag Model for AlGaN/GaN Power HEMTs

October 2015

Abstract — A circuit modeling drain-lag effects has been added in a non-linear electrothermal model...

Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs

VERZELLESI, Giovanni
BASILE, Alberto Francesco
MAZZANTI, Andrea
CANALI, Claudio
G. MENEGHESSO
E. ZANONI

January 2003

Temperature increase is shown to impact the turn-on waveforms of AlGaAs/GaAs heterostructure field-e...

Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs

A. F. BASILE
E. MANZINI
G. VERZELLESI
C. CANALI
R. PIEROBON
C. LANZIERI
MAZZANTI, ANDREA

January 2002

Gate- and drain-lag phenomena are investigated in AlGaAs-InGaAs pseudomorphic HEMTs by comparing exp...

Gate-lag effects in AlGaAs/GaAs power HFET's

M. BORGARINO
G. SOZZI
G. VERZELLESI
MAZZANTI, ANDREA

January 2001

Gate-lag effects have been characterized in as-fabricated and hot-carrier-stressed power AlGaAs/GaAs...

Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs)

G. VERZELLESI
AF BASILE
A. BONI
E. ZANONI
C. CANALI
MAZZANTI, ANDREA

January 2003

Gate-lag effects are characterized in AIGaAs-GaAs heterostructure field-effect transistors (HFETs) b...

Experimental and numerical assessment of gate-lag phenomena in AlGaAs/GaAs heterostructure field-effect transistors

VERZELLESI G.
MAZZANTI A.
BASILE A. F.
BONI A.
CANALI C.
ZANONI, ENRICO

January 2003

Gate-lag effects are characterized in AlGaAs-GaAs heterostructure field-effect transistors (HFETs) b...

Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs

TEDIOSI E.
BORGARINO M.
VERZELLESI G.
SOZZI, Giovanna
MENOZZI, Roberto

January 2001

The gate-lag turn-off transient of as-fabricated and hut-carrier stressed power AlGaAs/GaAs NFETs is...

Physics-Based Device Simulation of Lag and Power Compression in GaAs FETs

Kasai, D.
Kazami, Y.
Mitani, Y.
Horio, K.

January 2003

Two-dimensional transient simulation of GaAs FETs are performed in which substrate traps, surface st...

Simulation of Lag and Current Slump in AlGaN/GaN HEMTs as Affected by Buffer Trapping

A. Nakajima
K. Itagaki
K. Horio

July 2015

Two-dimensional transient simulations of AlGaN/GaN HEMTs are performed in which a deep donor and a d...

Characterization and Modeling of Substrate Trapping in HEMTs

Rathmell, James G
Parker, Anthony

January 2007

We present a novel and simple model of FET trapping based on a study of HEMTs using pulse techniques...

Meneghesso, G.
Pierobon, R.
Rampazzo, F.
Mishra, U. K.
Zanoni, E.
VERZELLESI, Giovanni
CHINI, Alessandro
CANALI, Claudio

January 2004

Drain current dispersion effects are investigated in AlGaN-GaN HEMTs by means of pulsed, transient, ...

Analysis of hot electron degradations in pseudomorphic HEMTs by DCTS and LF noise characterization

LABAT N
SAYSSET N
TOUBOUL A
DANTO Y
COVA P.
FANTINI F

January 1997

Commercial pseudomorphic AlGaAs/InGaAs HEMTs designed for low noise operation have demonstrated weak...

Simulation of Drastic Lag Phenomena in GaAs-Based FETs for Large Voltage Swing

K. Horio
Y. Mitani
A. Wakabayashi
N. Kurosawa

January 2001

Turn-on characteristics of GaAs MESFETs and HEMTs are simulated when the gate voltage is changed abr...

A Drain-Lag Model for AlGaN/GaN Power HEMTs

October 2015

Abstract — A circuit modeling drain-lag effects has been added in a non-linear electrothermal model...

Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs

VERZELLESI, Giovanni
BASILE, Alberto Francesco
MAZZANTI, Andrea
CANALI, Claudio
G. MENEGHESSO
E. ZANONI

January 2003

Temperature increase is shown to impact the turn-on waveforms of AlGaAs/GaAs heterostructure field-e...

Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs

A. F. BASILE
E. MANZINI
G. VERZELLESI
C. CANALI
R. PIEROBON
C. LANZIERI
MAZZANTI, ANDREA

January 2002

Gate- and drain-lag phenomena are investigated in AlGaAs-InGaAs pseudomorphic HEMTs by comparing exp...

Gate-lag effects in AlGaAs/GaAs power HFET's

M. BORGARINO
G. SOZZI
G. VERZELLESI
MAZZANTI, ANDREA

January 2001

Gate-lag effects have been characterized in as-fabricated and hot-carrier-stressed power AlGaAs/GaAs...

Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs)

G. VERZELLESI
AF BASILE
A. BONI
E. ZANONI
C. CANALI
MAZZANTI, ANDREA

January 2003

Gate-lag effects are characterized in AIGaAs-GaAs heterostructure field-effect transistors (HFETs) b...

Experimental and numerical assessment of gate-lag phenomena in AlGaAs/GaAs heterostructure field-effect transistors

VERZELLESI G.
MAZZANTI A.
BASILE A. F.
BONI A.
CANALI C.
ZANONI, ENRICO

January 2003

Gate-lag effects are characterized in AlGaAs-GaAs heterostructure field-effect transistors (HFETs) b...

Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs

TEDIOSI E.
BORGARINO M.
VERZELLESI G.
SOZZI, Giovanna
MENOZZI, Roberto

January 2001

The gate-lag turn-off transient of as-fabricated and hut-carrier stressed power AlGaAs/GaAs NFETs is...

Physics-Based Device Simulation of Lag and Power Compression in GaAs FETs

Kasai, D.
Kazami, Y.
Mitani, Y.
Horio, K.

January 2003

Two-dimensional transient simulation of GaAs FETs are performed in which substrate traps, surface st...

Simulation of Lag and Current Slump in AlGaN/GaN HEMTs as Affected by Buffer Trapping

A. Nakajima
K. Itagaki
K. Horio

July 2015

Two-dimensional transient simulations of AlGaN/GaN HEMTs are performed in which a deep donor and a d...

Characterization and Modeling of Substrate Trapping in HEMTs

Rathmell, James G
Parker, Anthony

January 2007

We present a novel and simple model of FET trapping based on a study of HEMTs using pulse techniques...

Meneghesso, G.
Pierobon, R.
Rampazzo, F.
Mishra, U. K.
Zanoni, E.
VERZELLESI, Giovanni
CHINI, Alessandro
CANALI, Claudio

January 2004

Drain current dispersion effects are investigated in AlGaN-GaN HEMTs by means of pulsed, transient, ...

Analysis of hot electron degradations in pseudomorphic HEMTs by DCTS and LF noise characterization

LABAT N
SAYSSET N
TOUBOUL A
DANTO Y
COVA P.
FANTINI F

January 1997

Commercial pseudomorphic AlGaAs/InGaAs HEMTs designed for low noise operation have demonstrated weak...

Simulation of Drastic Lag Phenomena in GaAs-Based FETs for Large Voltage Swing

K. Horio
Y. Mitani
A. Wakabayashi
N. Kurosawa

January 2001

Turn-on characteristics of GaAs MESFETs and HEMTs are simulated when the gate voltage is changed abr...

A Drain-Lag Model for AlGaN/GaN Power HEMTs

October 2015

Abstract — A circuit modeling drain-lag effects has been added in a non-linear electrothermal model...

Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs

VERZELLESI, Giovanni
BASILE, Alberto Francesco
MAZZANTI, Andrea
CANALI, Claudio
G. MENEGHESSO
E. ZANONI

January 2003

Temperature increase is shown to impact the turn-on waveforms of AlGaAs/GaAs heterostructure field-e...

Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs

Abstract

Extracted data

Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs

Abstract

Extracted data

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