Numerical analysis of hot electron degradation modes in power HFETs

We present device simulation results showing that only a simultaneous, localised increase of the interface-state density at the gate-drain recess surface and of negative charge at the channel-buffer interface can thoroughly account for the hot-electron degradation modes observed experimentally in AlGaAs-GaAs HFETs, including drain saturation current degradation, reverse gate-current increase, kink and gate-lag enhancement