Single Event Charge Loss in EPROMs

In this summary we are showing preliminary but important and new results obtained in EPROM arrays after high-LET ion irradiation. These devices are characterized by larger integration density and thicker tunnel oxide than Flash memories [15-16]. Moreover, these device are designed to store information for very long times, not for frequent refresh of information, or for on-site reprogramming. As a consequence, target applications are different from those of Flash, too. Nevertheless, we are showing that, if devices are subjected to heavy ion irradiation (as can happen during long space missions) the information stored in EPROM are as vulnerable as those stored in Flash memories [15]