The dielectric properties of TlInSe2 grown by direct fusion of their constituent elements were studied in the frequency range of 30 KHz-20 MHz, temperature range of 173-373 K. The dielectric constant and dielectric loss of TlInSe2 were calculated by measuring capacitance (C) and dielectric loss factor (tan d). Both of them were found to decrease with increasing frequency and increase with increasing temperature. This behavior can be explained with two polarization mechanisms in the investigated frequency and temperature range. The relaxation times of these polarization mechanisms were obtained from Cole-Cole fits. At lower frequencies the relaxation time is 10(-6) while it was 10(-8) at the higher frequencies. The maximum barrier height (Wm...
Optical and electrical properties of TlInSSe layered single crystals have been studied by means of t...
The temperature and illumination effects on the transient and steady state photoconductivities of Tl...
The results of high-frequency dielectric measurements on obtained $TlIn_{1-x}Er_xSe_2$ single crysta...
TlInS2 single crystals were grown by using Bridgman-Stockbauer technique. Measurements of DC conduc...
Capacitance (C) and dielectric loss factor (tan d) of TlSe thin film with thickness of 900 A, measur...
The dielectric constant and the dielectric loss of TlSbSe2 thin films, obtained via thermal evaporat...
Due to the importance of the TlInSe2 crystal as neutron and gamma-ray detectors, its electrical and ...
TlGaSe2 layered crystals were characterized with dielectric spectroscopy measurements. We have studi...
TlInSe2 single crystal has been successfully prepared by the Bridgman crystal growth technique. The ...
In this report, the results of Dielectric and Raman spectroscopy of TlSe thin films are presented. T...
The results of high-frequency dielectric measurements on obtained TlIn1−xErxSe2 single crystals prov...
The results of measurements of the time dependences of the dielectric constant of TlGaSe2 in the com...
Peculiarities of the temperature behaviour of the dielectric susceptibility of TlInS2 in the tempera...
To specify the donor energy levels in TlInS2 single crystals, the dark electrical resistivity, photo...
In the doped crystals TlGaSe2 and TlInS2, using method of temperature dependencies of DC resistance ...
Optical and electrical properties of TlInSSe layered single crystals have been studied by means of t...
The temperature and illumination effects on the transient and steady state photoconductivities of Tl...
The results of high-frequency dielectric measurements on obtained $TlIn_{1-x}Er_xSe_2$ single crysta...
TlInS2 single crystals were grown by using Bridgman-Stockbauer technique. Measurements of DC conduc...
Capacitance (C) and dielectric loss factor (tan d) of TlSe thin film with thickness of 900 A, measur...
The dielectric constant and the dielectric loss of TlSbSe2 thin films, obtained via thermal evaporat...
Due to the importance of the TlInSe2 crystal as neutron and gamma-ray detectors, its electrical and ...
TlGaSe2 layered crystals were characterized with dielectric spectroscopy measurements. We have studi...
TlInSe2 single crystal has been successfully prepared by the Bridgman crystal growth technique. The ...
In this report, the results of Dielectric and Raman spectroscopy of TlSe thin films are presented. T...
The results of high-frequency dielectric measurements on obtained TlIn1−xErxSe2 single crystals prov...
The results of measurements of the time dependences of the dielectric constant of TlGaSe2 in the com...
Peculiarities of the temperature behaviour of the dielectric susceptibility of TlInS2 in the tempera...
To specify the donor energy levels in TlInS2 single crystals, the dark electrical resistivity, photo...
In the doped crystals TlGaSe2 and TlInS2, using method of temperature dependencies of DC resistance ...
Optical and electrical properties of TlInSSe layered single crystals have been studied by means of t...
The temperature and illumination effects on the transient and steady state photoconductivities of Tl...
The results of high-frequency dielectric measurements on obtained $TlIn_{1-x}Er_xSe_2$ single crysta...