Relaxation spectrum of the TlSbSe2 thin films

The dielectric constant and the dielectric loss of TlSbSe2 thin films, obtained via thermal evaporation of TlSbSe2 crystals grown by Stockber-Bridgman technique, have been measured using ohmic Al electrodes in the frequency range 0.2-100 KHz and within the temperature interval 293-353 K. The capacitance are found to decrease with increasing frequency and increase with increasing temperature. The activation energy values were evaluated too. A good agreement between the activation energy values obtained from capacitance and dielectric loss factor measurements has been observed. (C) 2009 Elsevier B.V. All rights reserved