Abstract The optical properties of Si/SiO2 superlattices (SLs) as a function of the Si layer thickness have been, for the first time, theoretically investigated. Through ab initio calculations we consider fully passivated structures, the presence of O vacancy at the Si/SiO2 interface or in the SiO2 matrix. We find that quantum confined states and O-related defect states play a key role in the experimentally observed visible luminescence in Si/SiO2 confined systems
Innovation in photovoltaic technology may offer cost competitive options to other energy sources and...
The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quant...
Effect of stress and interface defects on photo luminescence property of a silicon nano-crystal (Si-...
Abstract The optical properties of Si/SiO2 superlattices (SLs) as a function of the Si layer thickne...
The Si layer thickness dependence of the optical properties of silicon/silicon dioxide (Si/SiO2) sup...
We present ab initio results for the structural, electronic and optical properties of silicon nanost...
Photoluminescence and electroluminescence from a Si/SiO2 superlattice have been measured. They show ...
The observation of intense luminescence in Si/SiO2 superlattices (SLs) has lead to new theoretical r...
Photoluminescence and electroluminescence from a Si/SiO2 superlattice have been measured. They show ...
Superlattices of Si/SiO2 have been grown at room temperature with atomic layer precision using state...
The electronic and optical properties of Si-based quantum wells (QW's) are studied ab initio by mean...
We have constructed microscopic, structurally relaxed atomistic models of Si/SiO2 superlattices. The...
We report an x-ray absorption fine structure study at the Si K and L-3,L-2 edges of a series of Si/S...
Si nanocrystals embedded in SiO2 matrix were prepared by co-sputtering method followed by a post ann...
We report an x-ray absorption fine structure study at the Si K and L3,2 edges of a series of Si/SiO2...
Innovation in photovoltaic technology may offer cost competitive options to other energy sources and...
The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quant...
Effect of stress and interface defects on photo luminescence property of a silicon nano-crystal (Si-...
Abstract The optical properties of Si/SiO2 superlattices (SLs) as a function of the Si layer thickne...
The Si layer thickness dependence of the optical properties of silicon/silicon dioxide (Si/SiO2) sup...
We present ab initio results for the structural, electronic and optical properties of silicon nanost...
Photoluminescence and electroluminescence from a Si/SiO2 superlattice have been measured. They show ...
The observation of intense luminescence in Si/SiO2 superlattices (SLs) has lead to new theoretical r...
Photoluminescence and electroluminescence from a Si/SiO2 superlattice have been measured. They show ...
Superlattices of Si/SiO2 have been grown at room temperature with atomic layer precision using state...
The electronic and optical properties of Si-based quantum wells (QW's) are studied ab initio by mean...
We have constructed microscopic, structurally relaxed atomistic models of Si/SiO2 superlattices. The...
We report an x-ray absorption fine structure study at the Si K and L-3,L-2 edges of a series of Si/S...
Si nanocrystals embedded in SiO2 matrix were prepared by co-sputtering method followed by a post ann...
We report an x-ray absorption fine structure study at the Si K and L3,2 edges of a series of Si/SiO2...
Innovation in photovoltaic technology may offer cost competitive options to other energy sources and...
The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quant...
Effect of stress and interface defects on photo luminescence property of a silicon nano-crystal (Si-...