In this work we describe the resistance changes due to Cu transport and precipitation during electromigration in 0.5 micron wide Al-0.5%Cu lines
[[abstract]]Experiments were performed to study the effect of metal line width on electromigration c...
The trend in integrated circuit (IC) technology is beginning to move from very large-scale integrati...
The resistance change due to electromigration induced voiding in modern copper interconnects ended b...
In this work we describe the resistance changes due to Cu transport and precipitation during electro...
The relative change in resistance due to electromigration was studied in thin (0.7 µm) film conducto...
In the present paper the evolution of the dislocation structure during electromigration in different...
Electromigration is one of the most important reliability issues in microelectronics. Material trans...
A simplified model is presented for the degradation of the conducting properties of Al stripes subje...
The resistance noise associated with electromigration in Al-Cu lines has been simulated
Divergence of atomic flux due to electromigration has been formulated for Al polycrystalline line co...
Electromigration is the mass transport of atoms in a material due to elevated temperatures and an ap...
We report on a collective body of work wherein we have studied the mass transport phenomena which ar...
Sensitive measurements of the evolution of the resistance of aluminum based metallisation stripes th...
[[abstract]]Experiments were performed to study the effect of metal line width on electromigration c...
Various physical mechanisms are involved in an electromigration (EM) process occurring in metal thin...
[[abstract]]Experiments were performed to study the effect of metal line width on electromigration c...
The trend in integrated circuit (IC) technology is beginning to move from very large-scale integrati...
The resistance change due to electromigration induced voiding in modern copper interconnects ended b...
In this work we describe the resistance changes due to Cu transport and precipitation during electro...
The relative change in resistance due to electromigration was studied in thin (0.7 µm) film conducto...
In the present paper the evolution of the dislocation structure during electromigration in different...
Electromigration is one of the most important reliability issues in microelectronics. Material trans...
A simplified model is presented for the degradation of the conducting properties of Al stripes subje...
The resistance noise associated with electromigration in Al-Cu lines has been simulated
Divergence of atomic flux due to electromigration has been formulated for Al polycrystalline line co...
Electromigration is the mass transport of atoms in a material due to elevated temperatures and an ap...
We report on a collective body of work wherein we have studied the mass transport phenomena which ar...
Sensitive measurements of the evolution of the resistance of aluminum based metallisation stripes th...
[[abstract]]Experiments were performed to study the effect of metal line width on electromigration c...
Various physical mechanisms are involved in an electromigration (EM) process occurring in metal thin...
[[abstract]]Experiments were performed to study the effect of metal line width on electromigration c...
The trend in integrated circuit (IC) technology is beginning to move from very large-scale integrati...
The resistance change due to electromigration induced voiding in modern copper interconnects ended b...