We report the results of new photoemission experiments from a clean and hydrogen-covered W(111) surface. Symmetry-related polarization effects are used to discriminate the symmetry of the initial states. Through a careful analysis of angle-resolved energy distribution curves and angle-resolved constant final-state spectra we are able to locate several surface bands in the clean surface emission and the hydrogen-induced states in the spectra from the covered surface. The experimental data are compared with the outcomes of semiempirical linear combination of atomic orbitals calculations both for the clean surface and for the adsorbed one, assuming a chemisorption geometry with H atoms bridging metal atoms of different layers. The model used s...
We present a synchrotron-radiation photoemission investigation of hydrogen chemisorption on GaAs(110...
The H-induced shift of the surface-atom core-level binding energy in W(110) is shown to arise from ...
H interactions with thermally cleaned Si(111) and Si(100) surfaces at 300-650K have been studied by ...
We report the results of new photoemission experiments from a clean and hydrogen-covered W(111) surf...
A detailed analysis of W(111) surface has been carried out by means of photoemission spectroscopy, t...
We report results of synchrotron angular resolved photoemission experiments from W(111) together wit...
By means of angle-resolved photoemission, we have uncovered surface related states on the pristine a...
The nonselfconsistent layer KKR method was used to calculate both electron reflectivities up to 12 e...
Hydrogen adsorption on Gd(0001) has been studied with angle-resolved photoemission. Hydrogen adsorpt...
An angle-resolved photoemission study of the NdB6(110) clean surface has been done in order to inves...
The (111) surfaces of Si and Ge were studied by scanning tunneling microscopy (STM) and photoelectro...
We investigate the formation of a two-dimensional electron gas (2DEG) at the hydrogen-passivated sil...
Photoemission energy distribution experiments on clean metal and adsorbate-covered surfaces were per...
The electronic structure of H/Ge(111)1×1 was investigated using angle-resolved photoelectron spectro...
The two-dimensional surface electronic band structure of H:GaAs(110) is studied by angular resolved ...
We present a synchrotron-radiation photoemission investigation of hydrogen chemisorption on GaAs(110...
The H-induced shift of the surface-atom core-level binding energy in W(110) is shown to arise from ...
H interactions with thermally cleaned Si(111) and Si(100) surfaces at 300-650K have been studied by ...
We report the results of new photoemission experiments from a clean and hydrogen-covered W(111) surf...
A detailed analysis of W(111) surface has been carried out by means of photoemission spectroscopy, t...
We report results of synchrotron angular resolved photoemission experiments from W(111) together wit...
By means of angle-resolved photoemission, we have uncovered surface related states on the pristine a...
The nonselfconsistent layer KKR method was used to calculate both electron reflectivities up to 12 e...
Hydrogen adsorption on Gd(0001) has been studied with angle-resolved photoemission. Hydrogen adsorpt...
An angle-resolved photoemission study of the NdB6(110) clean surface has been done in order to inves...
The (111) surfaces of Si and Ge were studied by scanning tunneling microscopy (STM) and photoelectro...
We investigate the formation of a two-dimensional electron gas (2DEG) at the hydrogen-passivated sil...
Photoemission energy distribution experiments on clean metal and adsorbate-covered surfaces were per...
The electronic structure of H/Ge(111)1×1 was investigated using angle-resolved photoelectron spectro...
The two-dimensional surface electronic band structure of H:GaAs(110) is studied by angular resolved ...
We present a synchrotron-radiation photoemission investigation of hydrogen chemisorption on GaAs(110...
The H-induced shift of the surface-atom core-level binding energy in W(110) is shown to arise from ...
H interactions with thermally cleaned Si(111) and Si(100) surfaces at 300-650K have been studied by ...