Noise behavior in SiGe devices
- M. Regis
- L. Bary
- O. Llopis
- J. Graffeuil
- L. Escotte
- U. Koenig
- R. Plana
- BORGARINO, Mattia
Publication date
January 2001
DOI Publisher
Elsevier Science Limited:Oxford Fulfillment Center, PO Box 800, Kidlington Oxford OX5 1DX United Kingdom:011 44 1865 843000, 011 44 1865 843699, EMAIL: asianfo@elsevier.com, tcb@elsevier.co.UK, INTERNET: http://www.elsevier.com, http://www.elsevier.com/locate/shpsa/, Fax: 011 44 1865 843010 ISSN
0038-1101Abstract
This paper presents an overview of SiGe technologies and their corresponding noise properties both in the high frequency and low frequency range. We demonstrate that SiGe bipolar technology exhibits impressive low frequency noise performance with an excess corner noise frequency in the 1kHz range. These results have been validated by low phase noise microwave oscillators based on SiGe material
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