We investigated the space-charge layer at the surface of heavily doped GaAs(110) by means of HREELS, looking at the surface coupled collective excitations (phonon-plasmon, i.e. plasmarons). We could reproduce the general behaviour of the HREEL spectra based on a dielectric three-layer model, finding a strong value for the value of the plasmon damping
The free-carrier-induced plasma excitation in heavily doped p-type GaAs(110) is studied by means of ...
We present a high resolution electron energy loss spectroscopy investigation of the Bi/[n-type GaAs(...
We present a high resolution electron energy loss spectroscopy investigation of the Bi/[n-type GaAs(...
We investigated the space-charge layer at the surface of heavily doped GaAs(110) by means of HREELS,...
The Single particle and Collective excitations of the clean GaAs(110) surface has been investigated ...
We investigated the evolution of the space-charge layer at the GaAs(110) surface as a function of th...
We investigated the evolution of the space-charge layer at the GaAs(110) surface as a function of th...
The Single particle and Collective excitations of the clean GaAs(110) surface has been investigated ...
We present high-resolution electron energy loss measurements on heavily doped p-type GaAs(110), expl...
We present high-resolution electron energy loss measurements on heavily doped p-type GaAs(110), expl...
We present high-resolution electron energy loss measurements on heavily doped p-type GaAs(110), expl...
The long range nature of dipolar scattering in HREELS of III-V materials gives the technique the abi...
The interplay between surface phonons and plasmons in n-doped GaAs(110) surface have been investigat...
We present a high-resolution electron-energy-loss analysis of the interface system Cs/GaAs(110) grow...
The free-carrier-induced plasma excitation in heavily doped p-type GaAs(110) is studied by means of ...
The free-carrier-induced plasma excitation in heavily doped p-type GaAs(110) is studied by means of ...
We present a high resolution electron energy loss spectroscopy investigation of the Bi/[n-type GaAs(...
We present a high resolution electron energy loss spectroscopy investigation of the Bi/[n-type GaAs(...
We investigated the space-charge layer at the surface of heavily doped GaAs(110) by means of HREELS,...
The Single particle and Collective excitations of the clean GaAs(110) surface has been investigated ...
We investigated the evolution of the space-charge layer at the GaAs(110) surface as a function of th...
We investigated the evolution of the space-charge layer at the GaAs(110) surface as a function of th...
The Single particle and Collective excitations of the clean GaAs(110) surface has been investigated ...
We present high-resolution electron energy loss measurements on heavily doped p-type GaAs(110), expl...
We present high-resolution electron energy loss measurements on heavily doped p-type GaAs(110), expl...
We present high-resolution electron energy loss measurements on heavily doped p-type GaAs(110), expl...
The long range nature of dipolar scattering in HREELS of III-V materials gives the technique the abi...
The interplay between surface phonons and plasmons in n-doped GaAs(110) surface have been investigat...
We present a high-resolution electron-energy-loss analysis of the interface system Cs/GaAs(110) grow...
The free-carrier-induced plasma excitation in heavily doped p-type GaAs(110) is studied by means of ...
The free-carrier-induced plasma excitation in heavily doped p-type GaAs(110) is studied by means of ...
We present a high resolution electron energy loss spectroscopy investigation of the Bi/[n-type GaAs(...
We present a high resolution electron energy loss spectroscopy investigation of the Bi/[n-type GaAs(...