We performed molecular dynamics simulations to study the atomic structure of the \u3b2-SiC/Si(001) and (111) interfaces. The wide lattice mismatch between the two materials (~ 20%) introduces an array of misfit dislocations along the interface, responsible for releasing almost all the strain which would be present in a pseudomorphic structure. The interface termination, its stoichiometry and the core dislocation structures are here discussed; for the most stable heterostructures, the simulated HREM images are presented, and the features connected to the peculiar interface reconstructions evidenced
We have performed molecular dynamics simulations of thin layers of SiC on Si substrates to determine...
We investigate the structural and electronic properties of the interface between hydrogenated amorph...
Silicon carbide (SiC) semiconductor device is expected to be used under a severe environment like th...
We performed molecular dynamics simulations to study the atomic structure of the β-SiC/Si(001) and (...
We performed molecular dynamics simulations to study the atomic structure of the β-SiC/Si(001) and (...
Misfit defects in a 3C-SiC/Si (001) interface were investigated using a 200 kV high-resolution elect...
Abstract. In this paper, we will review some recent investigations on extended defects in cubic SiC,...
We review some recent investigations on prototypical SiC-based interfaces, as obtained from first-p...
Through the sequential use of classical molecular dynamics and first-principles relaxation methods, ...
Through the sequential use of classical molecular dynamics and first-principles relaxation methods, ...
We demonstrate locally the coherent formation of silicon carbide (SiC) on diamond, a rare example of...
Silicon carbide (SiC) is a promising semiconductor material for making high-performance power electr...
We report results from three distinct but related thrusts that aim to elucidate the atomic-scale str...
Thesis (Ph. D. in Science)--University of Tsukuba, (A), no. 5952, 2011.12.31Includes bibliographical...
The atomic and electronic structures of a facetted twin boundary in Si and a twin boundary in β-SiC ...
We have performed molecular dynamics simulations of thin layers of SiC on Si substrates to determine...
We investigate the structural and electronic properties of the interface between hydrogenated amorph...
Silicon carbide (SiC) semiconductor device is expected to be used under a severe environment like th...
We performed molecular dynamics simulations to study the atomic structure of the β-SiC/Si(001) and (...
We performed molecular dynamics simulations to study the atomic structure of the β-SiC/Si(001) and (...
Misfit defects in a 3C-SiC/Si (001) interface were investigated using a 200 kV high-resolution elect...
Abstract. In this paper, we will review some recent investigations on extended defects in cubic SiC,...
We review some recent investigations on prototypical SiC-based interfaces, as obtained from first-p...
Through the sequential use of classical molecular dynamics and first-principles relaxation methods, ...
Through the sequential use of classical molecular dynamics and first-principles relaxation methods, ...
We demonstrate locally the coherent formation of silicon carbide (SiC) on diamond, a rare example of...
Silicon carbide (SiC) is a promising semiconductor material for making high-performance power electr...
We report results from three distinct but related thrusts that aim to elucidate the atomic-scale str...
Thesis (Ph. D. in Science)--University of Tsukuba, (A), no. 5952, 2011.12.31Includes bibliographical...
The atomic and electronic structures of a facetted twin boundary in Si and a twin boundary in β-SiC ...
We have performed molecular dynamics simulations of thin layers of SiC on Si substrates to determine...
We investigate the structural and electronic properties of the interface between hydrogenated amorph...
Silicon carbide (SiC) semiconductor device is expected to be used under a severe environment like th...