Add to ORKGA new statistical model of stress-induced leakage current (SILC) is implemented and used to predict data retention and program disturbs of state-of-the-art flash memories, and to correlate oxide characterization outputs (density, cross section, energy level of defects) to flash memory reliability. Physical mechanisms inducing the largest threshold voltage (VT) degradation are explained, and tunnel oxide scaling effects on flash reliability are predicted
We present a novel experimental technique to identify the energy of traps responsible for the stress...
Flash memories represent today a mainstream technology, finding ever increasing applications for bot...
This work shows a new technique for localizing the position of the weak site responsible for the str...
A new statistical model of stress-induced leakage current (SILC) is implemented and used to predict ...
In this paper, through the use of a recently proposed statistical model of stress-induced leakage cu...
One of the major scalability limitations of flash memories is anomalous SILC, which strongly endange...
In this paper we applied the statistical model for independent defects described in Part I, to exper...
In this paper, we develop a detailed physical model to interpret the dependence of the stress induce...
The retention behavior of Flash memories with very thin tunnel oxide (t(ox) = 5 nm) is studied. The ...
The purpose of this paper is to illustrate a physically-based model allowing the statistical simulat...
We present a novel experimental technique to identify the energy of traps responsible for the stress...
Flash memories represent today a mainstream technology, finding ever increasing applications for bot...
This work shows a new technique for localizing the position of the weak site responsible for the str...
A new statistical model of stress-induced leakage current (SILC) is implemented and used to predict ...
In this paper, through the use of a recently proposed statistical model of stress-induced leakage cu...
One of the major scalability limitations of flash memories is anomalous SILC, which strongly endange...
In this paper we applied the statistical model for independent defects described in Part I, to exper...
In this paper, we develop a detailed physical model to interpret the dependence of the stress induce...
The retention behavior of Flash memories with very thin tunnel oxide (t(ox) = 5 nm) is studied. The ...
The purpose of this paper is to illustrate a physically-based model allowing the statistical simulat...
We present a novel experimental technique to identify the energy of traps responsible for the stress...
Flash memories represent today a mainstream technology, finding ever increasing applications for bot...
This work shows a new technique for localizing the position of the weak site responsible for the str...