Rutherford backscattering in channeling in combination with elastic recoil detection analysis has been used to study the formation and destruction of hydrogen supermolecular complexes (H2)n formed in single crystal silicon after hydrogen implantation and annealing in the range 150-800-degrees-C. Secondary ion mass spectroscopy has been used to confirm this interpretation by giving direct evidence for H-2. The supermolecular configuration can be interpreted as the nucleus for the formation of bubbles
Experimental results are presented on the study of Sb-H complexes in crystalline silicon, employing ...
Single crystal CZ Si samples were implanted with hydrogen ions to the dose of 2E16 He ions/cm(2) at ...
Single crystal CZ Si samples were implanted with hydrogen ions to the dose of 2E16 He ions/cm(2) at ...
Rutherford backscattering in channeling in combination with elastic recoil detection analysis has be...
This work is devoted to the characterization of the Si:H system obtained by high-fluence, low-energy...
This work is devoted to the characterization of the Si:H system obtained by high-fluence, low-energy...
The growth of a displacement field in single crystal silicon resulting from high dose hydrogen impla...
The growth of a displacement field in single crystal silicon resulting from high dose hydrogen impla...
Hydrogen is a quite common impurity in semiconductor-silicon technology: it is unintentionally but u...
Hydrogen is a quite common impurity in semiconductor-silicon technology: it is unintentionally but u...
The growth of a displacement field in single crystal silicon resulting from high dose hydrogen impla...
Experimental results are presented on the study of Sb-H complexes in crystalline silicon, employing ...
Experimental results are presented on the study of Sb-H complexes in crystalline silicon, employing ...
Experimental results are presented on the study of Sb-H complexes in crystalline silicon, employing ...
Experimental results are presented on the study of Sb-H complexes in crystalline silicon, employing ...
Experimental results are presented on the study of Sb-H complexes in crystalline silicon, employing ...
Single crystal CZ Si samples were implanted with hydrogen ions to the dose of 2E16 He ions/cm(2) at ...
Single crystal CZ Si samples were implanted with hydrogen ions to the dose of 2E16 He ions/cm(2) at ...
Rutherford backscattering in channeling in combination with elastic recoil detection analysis has be...
This work is devoted to the characterization of the Si:H system obtained by high-fluence, low-energy...
This work is devoted to the characterization of the Si:H system obtained by high-fluence, low-energy...
The growth of a displacement field in single crystal silicon resulting from high dose hydrogen impla...
The growth of a displacement field in single crystal silicon resulting from high dose hydrogen impla...
Hydrogen is a quite common impurity in semiconductor-silicon technology: it is unintentionally but u...
Hydrogen is a quite common impurity in semiconductor-silicon technology: it is unintentionally but u...
The growth of a displacement field in single crystal silicon resulting from high dose hydrogen impla...
Experimental results are presented on the study of Sb-H complexes in crystalline silicon, employing ...
Experimental results are presented on the study of Sb-H complexes in crystalline silicon, employing ...
Experimental results are presented on the study of Sb-H complexes in crystalline silicon, employing ...
Experimental results are presented on the study of Sb-H complexes in crystalline silicon, employing ...
Experimental results are presented on the study of Sb-H complexes in crystalline silicon, employing ...
Single crystal CZ Si samples were implanted with hydrogen ions to the dose of 2E16 He ions/cm(2) at ...
Single crystal CZ Si samples were implanted with hydrogen ions to the dose of 2E16 He ions/cm(2) at ...